×
验证码:
换一张
忘记密码?
记住我
×
登录
中文版
|
English
中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
ALL
ORCID
题名
作者
学科领域
关键词
文献类型
出处
收录类别
出版者
发表日期
存缴日期
资助项目
学科门类
学习讨论厅
图片搜索
粘贴图片网址
首页
研究单元&专题
作者
文献类型
学科分类
知识图谱
新闻&公告
在结果中检索
研究单元&专题
中国科学院半导体研... [11]
作者
于芳 [1]
叶小玲 [1]
徐波 [1]
文献类型
会议论文 [11]
发表日期
2008 [1]
2006 [1]
2004 [2]
2002 [3]
2000 [4]
语种
英语 [11]
出处
MATERIALS ... [3]
MATERIALS ... [3]
ADVANCED M... [2]
ADVANCED M... [1]
ADVANCED M... [1]
MATERIALS ... [1]
更多...
资助项目
收录类别
CPCI-S [11]
资助机构
IUMRS.; Am... [3]
Portuguese... [2]
IUMRS. [1]
Portuguese... [1]
SPIE.; Chi... [1]
×
知识图谱
SEMI OpenIR
开始提交
已提交作品
待认领作品
已认领作品
未提交全文
收藏管理
QQ客服
官方微博
反馈留言
浏览/检索结果:
共11条,第1-10条
帮助
限定条件
收录类别:CPCI\-S
语种:英语
已选(
0
)
清除
条数/页:
5
10
15
20
25
30
35
40
45
50
55
60
65
70
75
80
85
90
95
100
排序方式:
请选择
题名升序
题名降序
WOS被引频次升序
WOS被引频次降序
发表日期升序
发表日期降序
提交时间升序
提交时间降序
作者升序
作者降序
期刊影响因子升序
期刊影响因子降序
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R
会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:
Wang, XH
;
Wan, XL
;
Xiao, HL
;
Feng, C
;
Way, BZ
;
Yang, CB
;
Wang, JX
;
Wang, CM
;
Ran, JX
;
Hu, GX
;
Li, JM
;
Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)
  |  
收藏
  |  
浏览/下载:1769/523
  |  
提交时间:2010/03/09
Hydrogen Sensor
Algan/gan Heterostructure
Schottky Diode
The study of high temperature annealing of a-SiC : H films
会议论文
ADVANCED MATERIALS FORUM III丛书标题: MATERIALS SCIENCE FORUM, Aveiro, PORTUGAL, MAR 20-23, 2005
作者:
Zhang, S
;
Hu, Z
;
Raniero, L
;
Liao, X
;
Ferreira, I
;
Fortunato, E
;
Vilarinho, P
;
Perreira, L
;
Martins, R
;
Zhang, S, Univ Nova Lisboa, Fac Ciencias & Tecnol, Dept Ciencia Mat, Campus Caparica, P-2829516 Caparica, Portugal. 电子邮箱地址: sz@uninova.pt
Adobe PDF(1210Kb)
  |  
收藏
  |  
浏览/下载:1549/209
  |  
提交时间:2010/03/29
Silicon Carbide
High Temperature Annealing
Thin Film
Silicon
Pecvd
Characterization of polymorphous silicon thin film and solar cells
会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:
Zhang S
;
Xu Y
;
Liao X
;
Martins R
;
Fortunato E
;
Hu Z
;
Kong G
;
Zhang S Chinese Acad Sci Inst Semicond State Key Lab Surface Phys Beijing 100083 Peoples R China. 电子邮箱地址: sz@uninova.pt
Adobe PDF(270Kb)
  |  
收藏
  |  
浏览/下载:1366/215
  |  
提交时间:2010/10/29
Polymorphous Silicon
Thin Film
Solar Cell
Influence of the rapid thermal annealing on the properties of thin a-Si films
会议论文
ADVANCED MATERIALS FORUM II, 455-456, Caparica, PORTUGAL, APR 14-16, 2003
作者:
Nedev N
;
Beshkov G
;
Fortunato E
;
Georgiev SS
;
Ivanov T
;
Raniero L
;
Zhang SB
;
Martins R
;
Martins R Bulgarian Acad Sci Inst Solid State Phys Tzarigradsko Chaussee 72 BU-1784 Sofia Bulgaria. 电子邮箱地址: rm@uninova.pt
Adobe PDF(242Kb)
  |  
收藏
  |  
浏览/下载:1252/183
  |  
提交时间:2010/10/29
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
;
Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
Adobe PDF(179Kb)
  |  
收藏
  |  
浏览/下载:1710/289
  |  
提交时间:2010/11/15
Indium Phosphide
Semi-insulating
Annealing
Picts
Photoluminescence
Semiinsulating Inp
Indium-phosphide
Fe
Photoluminescence
Temperature
Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:
Ye XL
;
Chen YH
;
Xu B
;
Wang ZG
;
Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)
  |  
收藏
  |  
浏览/下载:1201/220
  |  
提交时间:2010/11/15
Reflectance-difference Spectroscopy
Indium Segregation
Ingaas/gaas Quantum Wells
Epitaxy-grown Ingaas/gaas
Surface Segregation
Interface
Effects of residual C and O impurities on photoluminescence in undoped GaN epilayers
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:
Kang JY
;
Shen YW
;
Wang ZG
;
Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
Adobe PDF(133Kb)
  |  
收藏
  |  
浏览/下载:1297/238
  |  
提交时间:2010/11/15
Defects
Gan
Photoluminescence
Electronic Structures
Yellow Luminescence
Epitaxial-films
Mg
Semi-insulating GaAs grown in outer space
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Chen NF
;
Zhong XR
;
Lin LY
;
Xie X
;
Zhang M
;
Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(158Kb)
  |  
收藏
  |  
浏览/下载:1536/315
  |  
提交时间:2010/11/15
Gaas
Outer Space
Microgravity
Integrated Circuit
Semiinsulating Gallium-arsenide
Lec-gaas
Defects
Stoichiometry
Segregation
Carbon
Boron
Improvement of thin silicon on sapphire (SOS) film materials and device performances by solid phase epitaxy
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 72 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Wang QY
;
Nie JP
;
Yu F
;
Liu ZL
;
Yu YH
;
Wang QY Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(121Kb)
  |  
收藏
  |  
浏览/下载:1459/267
  |  
提交时间:2010/11/15
Solid Phase Epitaxy
SilicOn On Sapphire (Sos)
Carrier Mobility
Influence of precipitates on GaN epilayer quality
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3), BEIJING, PEOPLES R CHINA, JUN 13-18, 1999
作者:
Kang JY
;
Huang QS
;
Wang ZG
;
Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
Adobe PDF(697Kb)
  |  
收藏
  |  
浏览/下载:1299/268
  |  
提交时间:2010/11/15
Precipitate
Gan
Wds
Tem
Cathodoluminescence
Vapor-phase Epitaxy
Films
Mechanism
Growth