Influence of precipitates on GaN epilayer quality
Kang JY; Huang QS; Wang ZG; Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
2000
会议名称IUMRS International Conference of Advanced Materials
会议录名称MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 75 (2-3)
页码214-217
会议日期JUN 13-18, 1999
会议地点BEIJING, PEOPLES R CHINA
出版地PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者ELSEVIER SCIENCE SA
ISSN0921-5107
部门归属xiamen univ, dept phys, xiamen 361005, peoples r china; chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要GaN epilayers grown on pre-nitridated (0001) sapphire substrates by metallorganic vapor phase epitaxy were investigated by wavelength dispersive X-ray spectroscopy and energy dispersive S-ray spectroscopy. Precipitates were observed to mainly consist of O impurity whose strengths were weaker than surrounding matrix. The precipitates were larger in size and distributed more sparsely and inhomogeneously in < 11-20 > directions of the epilayers grown on substrates pre-nitridated for longer periods. The larger precipitates often joined to cracks in the TEM specimens. The crack formation seems to be attributed to the compressive stress concentration at edge angles of the larger precipitates. Yellow luminescence of the epilayers was imaged by cathodoluminescence. The distribution similarity between the cathodoluminescence and the precipitates suggested that the precipitates were responsible for the yellow luminescence band. (C) 2000 Elsevier Science S.A, All rights reserved.
关键词Precipitate Gan Wds Tem Cathodoluminescence Vapor-phase Epitaxy Films Mechanism Growth
学科领域半导体材料
主办者IUMRS.; Amer Xtal Technol.; SUT Associates.; Univ Calif San Diego.; Shanghai Inst Met.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/15001
专题中国科学院半导体研究所(2009年前)
通讯作者Kang JY Xiamen Univ Dept Phys Xiamen 361005 Peoples R China.
推荐引用方式
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Kang JY,Huang QS,Wang ZG,et al. Influence of precipitates on GaN epilayer quality[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2000:214-217.
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