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Purification of metallurgical silicon through directional solidification in a large cold crucible 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 355, 期号: 1, 页码: 145-150
Authors:  Liu T (Liu, Tong);  Dong ZY (Dong, Zhiyuan);  Zhao YW (Zhao, Youwen);  Wang J (Wang, Jun);  Chen T (Chen, Teng);  Xie H (Xie, Hui);  Li J (Li, Jian);  Ni HJ (Ni, Haijiang);  Huo DX (Huo, Dianxin)
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Microstructural and mechanical characteristics of laser welding of Ti6Al4V and lead metal 期刊论文
JOURNAL OF MATERIALS PROCESSING TECHNOLOGY, 2012, 卷号: 212, 期号: 7, 页码: 1520-1527
Authors:  Zhao, SS;  Yu, G;  He, XL;  Hu, YW
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Two-dimensional electron gas mobility limited by barrier and quantum well thickness fluctuations scattering in AlxGa1-xN/GaN multi-quantum wells 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 100, 期号: 16, 页码: 162102
Authors:  Liu, GP;  Wu, J;  Lu, YW;  Zhao, GJ;  Gu, CY;  Liu, CB;  Sang, L;  Yang, SY;  Liu, XL;  Zhu, QS;  Wang, ZG
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Large scale purification of metallurgical silicon for solar cell by using electron beam melting 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2012, 卷号: 351, 期号: 1, 页码: 19-22
Authors:  Liu, T;  Dong, ZY;  Zhao, YW;  Wang, J;  Chen, T;  Xie, H;  Li, J;  Ni, HJ;  Huo, DX
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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2011, 卷号: 26, 期号: 7, 页码: Article no.75016
Authors:  Li H;  Zhou K;  Pang JB;  Shao YD;  Wang Z;  Zhao YW;  Li, H, Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China. wangz@whu.edu.cn
Adobe PDF(616Kb)  |  Favorite  |  View/Download:1844/454  |  Submit date:2011/07/05
Undoped Gallium Antimonide  Self-diffusion  Native Defects  N-type  Crystals  Cathodoluminescence  Photoluminescence  Semiconductors  Spectroscopy  Luminescence  
Donor defect in P-diffused bulk ZnO single crystal 会议论文
, Rio de Janeiro, BRAZIL, 2009
Authors:  Zhao YW (Zhao Youwen);  Zhang R (Zhang Rui);  Zhang F (Zhang Fan);  Dong ZY (Dong Zhiyuan);  Yang J (Yang Jun);  Zhao, YW, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China
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Zinc Oxide  Doping  Defect  
生长半绝缘砷化镓的石英管及在砷化镓中掺碳的方法 专利
专利类型: 发明, 申请日期: 2010-08-12, 公开日期: 2009-12-16, 2010-08-12
Inventors:  占 荣;  惠 峰;  赵有文
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非掺半绝缘InP材料的电子辐照缺陷研究 期刊论文
四川大学学报. 自然科学版, 2010, 卷号: 47, 期号: 5, 页码: 1069-1072
Authors:  陈燕;  邓爱红;  赵有文;  张英杰;  余鑫祥;  喻菁;  龙娟娟;  周宇璐;  张丽然
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InAs单晶衬底的表面形貌和化学成分分析 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 4, 页码: 878-882
Authors:  胡炜杰;  赵有文;  段满龙;  王应利;  王俊
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Surface roughness scattering in two dimensional electron gas channel 期刊论文
APPLIED PHYSICS LETTERS, 2010, 卷号: 97, 期号: 26, 页码: Article no.262111
Authors:  Liu B;  Lu YW;  Jin GR;  Zhao Y;  Wang XL;  Zhu QS;  Wang ZG;  Lu, YW, Beijing Jiaotong Univ, Dept Phys, Beijing 100044, Peoples R China. ywlu@bjtu.edu.cn;  qszhu@semi.ac.cn
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Molecular-beam Epitaxy  Mobility Algan/gan Heterostructures  Ray Photoemission Spectroscopy  Performance  Aln  Modfets  Inn