Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry

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	Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry
	Ye XL; Chen YH; Xu B; Wang ZG; Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	2002
会议名称	9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX)
会议录名称	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91
页码	62-65
会议日期	SEP 24-28, 2001
会议地点	RIMINI, ITALY
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0921-5107
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	The influence of the Indium segregation on the interface asymmetry in InGaAs/GaAs quantum wells have been studied by reflectance-difference spectroscopy (RDS). It is found that the anisotropy of the 2H1E (2HH --> 1E) transition is very sensitive to the degree of the interface asymmetry. Calculations taking into account indium segregation yield good agreement with the observed anisotropy structures. It demonstrates that the anisotropy intensity ratio of the 1L1E (1LH --> 1E) and 2H1E transitions measured by RDS can be used to characterize the interface asymmetry. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词	Reflectance-difference Spectroscopy Indium Segregation Ingaas/gaas Quantum Wells Epitaxy-grown Ingaas/gaas Surface Segregation Interface
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14897
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen YH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Ye XL,Chen YH,Xu B,et al. Detection of indium segregation effects in InGaAs/GaAs quantum wells using reflectance-difference spectrometry[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2002:62-65.

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