Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers

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	Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
	Zhao YW; Sun NF; Dong HW; Jiao JH; Zhao JQ; Sun TN; Lin LY; Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
	2002
会议名称	9th International Conference on Defects: Recognition, Imaging and Physics in Semiconductors (DRIP IX)
会议录名称	MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91
页码	521-524
会议日期	SEP 24-28, 2001
会议地点	RIMINI, ITALY
出版地	PO BOX 564, 1001 LAUSANNE, SWITZERLAND
出版者	ELSEVIER SCIENCE SA
ISSN	0921-5107
部门归属	hebei semicond res inst, shijiazhuang 050002, hebei, peoples r china; chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china; chinese acad sci, inst semicond, mat sci lab, beijing 100083, peoples r china
摘要	Semi-insulating (SI) InP wafers of 2 and 3 in. diameters have been prepared by annealing undoped LEC InP at 930 degreesC for 80 h under pure phosphorus ambient (PP) and iron phosphide ambient (IP). The electrical uniformity of annealed undoped SI wafers, along with a Fe-doped as-grown SI LEC InP wafer, has been characterized by whole wafer PL mapping and radial Hall measurements. Defects in these wafers have been detected by photo-induced current transient spectroscopy (PICTS). The results indicated that the uniformity of IP wafer is much better than that of PP wafer and as-grown Fe-doped Si InP wafer. There are fewer traps in undoped SI InP IP wafer than in as grown Fe-doped and undoped SI InP PP wafer, as evidenced by PICTS. The good uniformity of the IP wafer is related to the nonexistence of high concentration of thermally induced defects. The mechanism for this phenomenon is discussed based on the results. (C) 2002 Elsevier Science B.V. All rights reserved.
关键词	Indium Phosphide Semi-insulating Annealing Picts Photoluminescence Semiinsulating Inp Indium-phosphide Fe Photoluminescence Temperature
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14901
专题	中国科学院半导体研究所（2009年前）
通讯作者	Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
推荐引用方式 GB/T 7714	Zhao YW,Sun NF,Dong HW,et al. Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers[C]. PO BOX 564, 1001 LAUSANNE, SWITZERLAND:ELSEVIER SCIENCE SA,2002:521-524.

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