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Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 1, 页码: 013108
Authors:  Zhang, YH;  Wei, TB;  Xiong, Z;  Shang, L;  Tian, YD;  Zhao, Y;  Zhou, PY;  Wang, JX;  Li, JM
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Efficiency improvement and droop behavior in nanospherical-lens lithographically patterned bottom and top photonic crystal InGaN/GaN light-emitting diodes 期刊论文
OPTICS LETTERS, 2014, 卷号: 39, 期号: 2, 页码: 379-382
Authors:  Wei, TB;  Ji, XL;  Wu, K;  Zheng, HY;  Du, CX;  Chen, Y;  Yan, QF;  Zhao, LX;  Zhou, Z;  Wang, JX;  Li, JM
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Backward pumping kilowatt Yb(3+)-doped double-clad fiber laser 期刊论文
LASER PHYSICS, 2011, 卷号: 21, 期号: 9, 页码: 1621-1624
Authors:  Han ZH;  Lin XC;  Hou W;  Yu HJ;  Zhou SZ;  Li JM;  Han, ZH (reprint author), Chinese Acad Sci, Inst Semicond, A35 QingHua E Rd, Beijing 100083, Peoples R China, zhhan@semi.ac.cn
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Output Power  
LED光源在现代农业的应用原理与技术进展 期刊论文
中国农业科技导报, 2011, 卷号: 13, 期号: 5, 页码: 37-43
Authors:  杨其长;  徐志刚;  陈弘达;  泮进明;  魏灵玲;  刘文科;  周泓;  刘晓英;  宋昌斌
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Fracture properties of silicon carbide thin films by bulge test of long rectangular membrane 期刊论文
JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 2008, 卷号: 17, 期号: 2, 页码: 453-461
Authors:  Zhou, W;  Yang, JL;  Sun, GS;  Liu, XF;  Yang, FH;  Li, JM;  Zhou, W, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: jlyang@semi.ac.cn
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Bulge Test  Fracture Property  Microelectromechanical Systems (Mems)  Silicon Carbide (Sic) Thin Films  Weibull Distribution Function  
Fracture properties of silicon carbide thin films charcterized by bulge test of long membranes 会议论文
2008 3RD IEEE INTERNATIONAL CONFERENCE ON NANO/MICRO ENGINEERED AND MOLECULAR SYSTEMS, Sanya, PEOPLES R CHINA, JAN 06-09, 2008
Authors:  Zhou, W;  Yang, JL;  Sun, GS;  Liu, XF;  Yang, FH;  Li, JM;  Zhou, W, CAS, Inst Semicond, Beijing 100864, Peoples R China.
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Bulge Test Fracture Property  Silicon Carbide Thin Films  Weibull Distribution Function  
Growth of ZnO single crystal by chemical vapor transport method 期刊论文
JOURNAL OF RARE EARTHS, 2006, 卷号: 24, 期号: Sp.Iss.SI, 页码: 40275
Authors:  Zhou JM;  Dong ZY;  Wei XC;  Duan ML;  Li JM;  Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn
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Zinc Oxide  Chemical Vapor Transport  Single Crystal Growth  Hydrothermal Method  Bulk Zno  Impurities  Devices  
Growth of ZnO single crystal by chemical vapor transport method 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
Authors:  Zhou, JM;  Dong, ZY;  Wei, XC;  Duan, ML;  Li, JM;  Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Zinc Oxide  
采用PECVD方法制作SiO2绝缘层的AlGaN/GaN MOS-HFET器件 期刊论文
电子器件, 2005, 卷号: 28, 期号: 3, 页码: 479-481
Authors:  陈晓娟;  刘新宇;  和致经;  刘键;  邵刚;  魏珂;  吴德馨;  王晓亮;  周钧铭;  陈宏
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Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2003, 卷号: 250, 期号: 3-4, 页码: 345-348
Authors:  Zheng XH;  Wang YT;  Feng ZH;  Yang H;  Chen H;  Zhou JM;  Liang JW;  Zheng XH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(106Kb)  |  Favorite  |  View/Download:1402/521  |  Submit date:2010/08/12
In-plane Strain  Lattice Parameters  Triple-axis Diffraction  C-gan  Growth  Films