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近红外波段半导体单量子点的荧光探测和波长调谐 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  周鹏宇
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半导体量子点  金刚石对顶砧压力装置  微区光谱  单光子探测  压力调谐  
Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 3633
Authors:  Zhou, PY;  Dou, XM;  Wu, XF;  Ding, K;  Li, MF;  Ni, HQ;  Niu, ZC;  Jiang, DS;  Sun, BQ
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Enhanced optical power of GaN-based light-emitting diode with compound photonic crystals by multiple-exposure nanosphere-lens lithography 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 105, 期号: 1, 页码: 013108
Authors:  Zhang, YH;  Wei, TB;  Xiong, Z;  Shang, L;  Tian, YD;  Zhao, Y;  Zhou, PY;  Wang, JX;  Li, JM
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Photoluminescence studies on self-organized 1.55-mu m InAs/InGaAsP/InP quantum dots under hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 2, 页码: 023510
Authors:  Zhou, PY;  Dou, XM;  Wu, XF;  Ding, K;  Luo, S;  Yang, T;  Zhu, HJ;  Jiang, DS;  Sun, BQ
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COMMENT ON NEGATIVE-U PROPERTY OF THE DX CENTER IN ALXGA1-XAS-SI - REPLY 期刊论文
PHYSICAL REVIEW B, 1990, 卷号: 42, 期号: 15, 页码: 9711-9712
Authors:  LI MF;  YU PY;  JIA YB;  ZHOU J;  GAO JL;  LI MF UNIV CALIF BERKELEYDEPT PHYSBERKELEYCA 94720
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NEGATIVE-U PROPERTY OF THE DX CENTER IN ALXGA1-XAS-SI 期刊论文
PHYSICAL REVIEW B, 1989, 卷号: 40, 期号: 2, 页码: 1430-1433
Authors:  LI MF;  JIA YB;  YU PY;  ZHOU J;  GAO JL;  LI MF CHINESE CTR ADV SCI & TECHNOL WORLD LABCTR THEORET PHYSBEIJINGPEOPLES R CHINA
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一种检测光通讯波段半导体材料发光单光子特性的方法 专利
专利类型: 发明, 公开日期: 2014-02-12
Inventors:  周鹏宇;  孙宝权;  窦秀明;  武雪飞;  丁琨
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