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InAs单晶衬底的表面形貌和化学成分分析 期刊论文
人工晶体学报, 2010, 卷号: 39, 期号: 4, 页码: 878-882
Authors:  胡炜杰;  赵有文;  段满龙;  王应利;  王俊
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闭管化学气相传输法生长ZnO单晶方法 专利
专利类型: 发明, 申请日期: 2007-06-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵有文;  董志远;  段满龙;  魏学成
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InP单晶锭退火处理方法 专利
专利类型: 发明, 申请日期: 2007-03-28, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵友文;  段满龙
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Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 期刊论文
JOURNAL OF RARE EARTHS, 2006, 卷号: 24, 期号: Sp.Iss.SI, 页码: 75-77
Authors:  Zhao YW;  Dong ZY;  Duan ML;  Sun WR;  Yang ZX;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn
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Indium Phosphide  Defect  Semi-insualting  Stimulated Current Spectroscopy  Current Transient Spectroscopy  Semi-insulating Inp  Deep-level Defects  Fe  
Growth of ZnO single crystal by chemical vapor transport method 期刊论文
JOURNAL OF RARE EARTHS, 2006, 卷号: 24, 期号: Sp.Iss.SI, 页码: 40275
Authors:  Zhou JM;  Dong ZY;  Wei XC;  Duan ML;  Li JM;  Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. E-mail: zhaoyw@red.semi.ac.cn
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Zinc Oxide  Chemical Vapor Transport  Single Crystal Growth  Hydrothermal Method  Bulk Zno  Impurities  Devices  
Growth of ZnO single crystal by chemical vapor transport method 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
Authors:  Zhou, JM;  Dong, ZY;  Wei, XC;  Duan, ML;  Li, JM;  Zhou, JM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Zinc Oxide  
Growth of high quality semi-insulating InP single crystal by suppression of compensation defects 会议论文
JOURNAL OF RARE EARTHS, Beijing, PEOPLES R CHINA, OCT 16-19, 2005
Authors:  Zhao, YW;  Dong, ZY;  Duan, ML;  Sun, WR;  Yang, ZX;  Zhao, YW, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zhaoyw@red.semi.ac.cn
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Indium Phosphide  
化学气相传输法生长ZnO单晶 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 2, 页码: 336-339
Authors:  赵有文;  董志远;  魏学成;  段满龙;  李晋闽
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半绝缘InP中深能级缺陷对电学性质的影响和缺陷的控制 期刊论文
半导体学报, 2006, 卷号: 27, 期号: 3, 页码: 524-529
Authors:  赵有文;  董志远;  李成基;  段满龙;  孙文荣
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化学气相传输法生长ZnO单晶及性质研究 期刊论文
人工晶体学报, 2006, 卷号: 35, 期号: 2, 页码: 404-408
Authors:  赵有文;  董志远;  魏学成;  段满龙;  李晋闽
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