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Persistent photoconductivity in neutron irradiated GaN 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 9, 页码: 093005
Authors:  Zhang, Minglan;  Yang, Ruixia;  Liu, Naixin;  Wang, Xiaoliang
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Influence of AlGaN Buffer Growth Temperature on GaN Epilayer based on Si(111) Substrate 会议论文
3RD INTERNATIONAL PHOTONICS AND OPTOELECTRONICS MEETINGS (POEM 2010), 276: Art. No. 012094 2011, Wuhan, PEOPLES R CHINA, NOV 02-05, 2010
Authors:  Wei M (Wei Meng);  Wang XL (Wang Xiaoliang);  Pan X (Pan Xu);  Xiao HL (Xiao Hongling);  Wang CM (Wang Cuimei);  Zhang ML (Zhang Minglan);  Wang ZG (Wang Zhanguo)
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Properties investigation of GaN films implanted by Sm ions under different implantation and annealing conditions 期刊论文
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 2011, 卷号: 104, 期号: 1, 页码: 429-432
Authors:  Jiang LJ;  Wang XL;  Xiao HL;  Wang ZG;  Yang CB;  Zhang ML
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Gan  Ferromagnetic  Implantation  Annealing  
高击穿电压AlGaN/GaN HEMT电力开关器件研究进展 期刊论文
半导体技术, 2010, 卷号: 35, 期号: 5, 页码: 417-422
Authors:  张明兰;  杨瑞霞;  王晓亮;  胡国新;  高志
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AlGaN/GaN HEMT中电场分布的ATLAS模拟 期刊论文
半导体技术, 2010, 卷号: 35, 期号: 9, 页码: 874-876,902
Authors:  张明兰;  王晓亮;  杨瑞霞;  胡国新
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高压开关AlGaN/GaN HEMT材料及器件研究 学位论文
, 北京: 中国科学院半导体研究所, 2009
Authors:  张明兰
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Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2009, 卷号: 45, 期号: 2, 页码: 54-59
Authors:  Zhang ML;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Tang J;  Feng C;  Jiang LJ;  Hu GX;  Ran JX;  Wang MG;  Zhang ML Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: mlzhang@semi.ac.cn
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Algan/gan Heterostructure  Superlattices (Sls)  Root Mean Square Roughness (Rms)  Sheet Resistance  
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
SOLID-STATE ELECTRONICS, 2009, 卷号: 53, 期号: 3, 页码: 332-335
Authors:  Wang XL;  Chen TS;  Xiao HL;  Tang J;  Ran JX;  Zhang ML;  Feng C;  Hou QF;  Wei M;  Jiang LJ;  Li JM;  Wang ZG;  Wang XL Chinese Acad Sci Ctr Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China. E-mail Address: xlwang@semi.ac.cn
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Algan/aln/gan  Hemt  Mocvd  Sic Substrate  Power Device  
Structural and Magnetic Properties of Sm Implanted GaN 期刊论文
CHINESE PHYSICS LETTERS, 2009, 卷号: 26, 期号: 7, 页码: Art. No. 077502
Authors:  Jiang LJ;  Wang XL;  Xiao HL;  Wang ZG;  Feng C;  Zhang ML;  Tang J;  Jiang LJ Chinese Acad Sci Novel Mat Lab Inst Semicond Beijing 100083 Peoples R China. E-mail Address: ljjiang@semi.ac.cn
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AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
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Algan/gan Hemts