SEMI OpenIR

Browse/Search Results:  1-10 of 11 Help

Filters    
Selected(0)Clear Items/Page:    Sort:
Theoretical design and performance of InxGa1-xN two-junction solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2008, 卷号: 41, 期号: 24, 页码: Art. No. 245104
Authors:  Zhang, XB;  Wang, XL;  Xiao, HL;  Yang, CB;  Ran, JX;  Wang, CM;  Hou, QF;  Li, JM;  Wang, ZG;  Zhang, XB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xbzhang@semi.ac.cn
Adobe PDF(1318Kb)  |  Favorite  |  View/Download:1381/423  |  Submit date:2010/03/08
In1-xgaxn Alloys  Band-gap  Irradiance  Single  Inn  
Growth temperature dependences of InN films grown by MOCVD 期刊论文
APPLIED SURFACE SCIENCE, 2008, 卷号: 255, 期号: 5, 页码: 3149-3152 Part 2
Authors:  Yang, CB;  Wang, XL;  Xiao, HL;  Zhang, XB;  Hua, GX;  Ran, JX;  Wang, CM;  Li, JP;  Li, JM;  Wang, ZG;  Yang, CB, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, Jia 35,Qinghua Dong Rd,POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: cbyang@semi.ac.cn
Adobe PDF(534Kb)  |  Favorite  |  View/Download:1140/394  |  Submit date:2010/03/08
Inn  Mocvd  Mobility  
AlGaN/AlN/GaN/InGaN/GaN DH-HEMTs with improved mobility grown by MOCVD 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Tang J;  Wang XL;  Chen TS;  Xiao HL;  Ran JX;  Zhang ML;  Hu GX;  Feng C;  Hou QF;  Wei M;  Li JM;  Wang ZG;  Tang, J, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3875Kb)  |  Favorite  |  View/Download:1356/433  |  Submit date:2010/03/09
Algan/gan Hemts  
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
Authors:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)  |  Favorite  |  View/Download:1494/329  |  Submit date:2010/03/09
Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
Authors:  Tang, J;  Wang, XL;  Xiao, HL;  Ran, JX;  Wang, CM;  Wang, XY;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(222Kb)  |  Favorite  |  View/Download:1629/451  |  Submit date:2010/03/09
Performance  Heterostructures  Optimization  Mobility  
The effect of low temperature AlN interlayers on the growth of GaN epilayer on Si (111) by MOCVD 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2008, 卷号: 44, 期号: 2, 页码: 153-159
Authors:  Luo, WJ;  Wang, XL;  Guo, LC;  Xiao, HL;  Wang, CM;  Ran, JX;  Li, JP;  Li, JM;  Luo, WJ, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: luoweijun@mail.semi.ac.cn
Adobe PDF(677Kb)  |  Favorite  |  View/Download:1229/534  |  Submit date:2010/03/08
Gallium Nitride Crack  Low Temperature Aluminum Nitride  Interlayer  Silicon  
Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文
APPLIED PHYSICS LETTERS, 2008, 卷号: 93, 期号: 10, 页码: Art. No. 102112
Authors:  Ma, P;  Gai, YQ;  Wang, JX;  Yang, FH;  Zeng, YP;  Li, JM;  Li, JB;  Ma, P, Chinese Acad Sci, Inst Semicond, Int Cooperat Base Solid State Lighting, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yqgai@semi.ac.cn;  jbli@semi.ac.cn
Adobe PDF(283Kb)  |  Favorite  |  View/Download:1364/435  |  Submit date:2010/03/08
P-type Gan  Molecular-beam Epitaxy  Augmented-wave Method  Vapor-phase Epitaxy  Electrical-properties  Oxygen  Activation  Silicon  
High Quality AlGaN Grown on GaN Template with HT-AlN Interlayer 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Yan, JC;  Wang, JX;  Liu, Z;  Liu, NX;  Li, JM;  Yan, JC, Chinese Acad Sci, Inst Semicond, R&D Ctr Semicond Lighting, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3352Kb)  |  Favorite  |  View/Download:802/217  |  Submit date:2010/03/09
Diodes  
Operational Optimization of GaN Thin Film Growth Employing Numerical Simulation in a Showerhead MOCVD Reactor 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
Authors:  Yin, HB;  Wang, XL;  Hu, GX;  Ran, JX;  Xiao, HL;  Li, JM;  Yin, HB, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(3395Kb)  |  Favorite  |  View/Download:949/326  |  Submit date:2010/03/09
Hydrogen sensors based on Pt-AlGN/AIN/GaN Schottky diode - art. no. 68291R 会议论文
ADVANCED MATERIALS AND DEVICES FOR SENSING AND IMAGING III, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
Authors:  Wang, XH;  Wan, XL;  Xiao, HL;  Feng, C;  Way, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wan, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(339Kb)  |  Favorite  |  View/Download:1338/523  |  Submit date:2010/03/09
Hydrogen Sensor  Algan/gan Heterostructure  Schottky Diode