AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
	Tang, J; Wang, XL; Xiao, HL; Ran, JX; Wang, CM; Wang, XY; Hu, GX; Li, JM; Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
	2008
会议名称	34th International Symposium on Compound Semiconductors
会议录名称	PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS
页码	VOL 5,NO 9,5 (9): 2982-2984
会议日期	OCT 15-18, 2007
会议地点	Kyoto, JAPAN
出版地	PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	1610-1634
部门归属	[tang, jian; wang, xiaoliang; xiao, hongling; ran, junxue; wang, cuimei; wang, xiaoyan; hu, guoxin; li, jinmin] chinese acad sci, inst semicond, novel mat lab, beijing 100083, peoples r china
摘要	A novel AlGaN/GaN/GaN/GaN double heterojunction high electron mobility transistors (DH-HEMTS) structure with an AlN interlayer on sapphire substrate has been grown by MOCVD. The structure featured a 6-10 nm In0.1Ga0.9N layer inserted between the GaN channel and GaN buffer. And wer also inserted one ultrathin. AlN interlayer into the Al/GaN/GaN interface, which significantly enhanced the mobility of two-dimensional electron gas (2DEG) existed in the GaN channel. AFM result of this structure shows a good surface morphology and a low dislocation density, with the root-mean-square roughness (RMS) of 0.196 nm for a scan area of 5 mu m x 5 mu m. Temperature dependent Hall measurement was performed on this sample, and a mobility as high as 1950 cm(2)/Vs at room temperature (RT) was obtained. The sheet carrier density was 9.89 x10(12) cm(2), and average sheet resistance of 327 Omega/sq was achieved. The mobility obtained in this paper is about 50% higher than other results of similar structures which have been reported. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
关键词	Performance Heterostructures Optimization Mobility
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/7766
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Tang, J,Wang, XL,Xiao, HL,et al. AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD[C]. PAPPELALLEE 3, W-69469 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2008:VOL 5,NO 9,5 (9): 2982-2984.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
655.pdf（222KB）			限制开放	--	请求全文