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In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Liu, YF;  Xie, J;  Yang, JL;  Tang, LJ;  Yang, FH;  Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(1394Kb)  |  收藏  |  浏览/下载：1431/370  |  提交时间：2010/03/09
Films  
Synthesis of GaN nanorods with vertebra-like morphology 会议论文
2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems, Zhuhai, PEOPLES R CHINA, JAN 18-21, 2006
作者:  Gao, HY (Gao, Haiyong);  Li, JM (Li, Jinmin);  Gao, HY, Chinese Acad Sci, Inst Semicond, Novel Mat Dept, Beijing 100083, Peoples R China.
Adobe PDF(3971Kb)  |  收藏  |  浏览/下载：1259/240  |  提交时间：2010/03/29
Gan Nanorods  Ga2o3/zno Films  Nitritding  Morphology  Chemical-vapor-deposition  Films  
Research on the band-gap of InN grown on siticon substrates 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Xiao, HL;  Wang, XL;  Wang, JX;  Zhang, NH;  Liu, HX;  Zeng, YP;  Li, JM;  Xiao, HL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(164Kb)  |  收藏  |  浏览/下载：1369/408  |  提交时间：2010/03/29
Molecular-beam Epitaxy  Wurtzite Inn  Nitride  Absorption  Alloys  Films  
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires 会议论文
Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES, Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Zeng, XB;  Liao, XB;  Dai, ST;  Wang, B;  Xu, YY;  Xiang, XB;  Hu, ZH;  Diao, HW;  Kong, GL;  Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(892Kb)  |  收藏  |  浏览/下载：1666/241  |  提交时间：2010/03/29
Chemical Vapor Deposition Processes  Nanomaterials  Semiconducting Silicon  Visible Photoluminescence  Porous Silicon  Amorphous-silicon  Si  Spectroscopy  Films  Nanostructures  Confinement  Growth  
High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文
GAN AND RELATED ALLOYS-2002, 743, BOSTON, MA, DEC 02-06, 2002
作者:  Wang JX;  Wang XL;  Sun DZ;  Li JM;  Zeng YP;  Hu GX;  Liu HX;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China.
Adobe PDF(119Kb)  |  收藏  |  浏览/下载：1726/427  |  提交时间：2010/10/29
Molecular-beam Epitaxy  Ion-scattering Spectroscopy  Lattice Polarity  Single-crystals  Films  Polarization  Gan(0001)  Surfaces  Growth  Diodes  
Epitaxial growth of SiC on complex substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Sun GS;  Li JM;  Luo MC;  Zhu SR;  Wang L;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(196Kb)  |  收藏  |  浏览/下载：1254/261  |  提交时间：2010/11/15
Optical Microscopy  X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Sapphire  Deposition  Films  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1609/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Homoepitaxial growth and device characteristics of SiC on Si-face (0001) 6H-SiC 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li JM;  Sun GS;  Zhu SR;  Wang L;  Luo MC;  Zhang FF;  Lin LY;  Sun GS Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(113Kb)  |  收藏  |  浏览/下载：1234/247  |  提交时间：2010/11/15
X-ray Diffraction  Molecular Beam Epitaxy  Semiconducting Silicon Compounds  Low-temperature Growth  Films  
Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix 会议论文
FOURTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS, 4086, SHANGHAI, PEOPLES R CHINA, MAY 08-11, 2000
作者:  Ma ZX;  Liao XB;  Zheng WM;  Yu J;  Chu JH;  Ma ZX Chinese Acad Sci Inst Semicond Ctr Fis Mat Condensada State Key Lab Surface Phys POB 912 Beijing 100083 Peoples R China.
Adobe PDF(291Kb)  |  收藏  |  浏览/下载：3174/1023  |  提交时间：2010/10/29
Nanocrystalline Silicon  Raman Scattering  Infrared Absorption  Phonon Confinement  Microcrystalline Silicon  Polycrystalline Silicon  Films  
High efficiency, low vertical divergence angle 980nnn Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers 会议论文
IN-PLANE SEMICONDUCTOR LASERS IV, 3947, SAN JOSE, CA, JAN 24-25, 2000
作者:  Xiu ZT;  Zhang JM;  Ma XY;  Yang GW;  Shen GD;  Chen LH;  Xiu ZT Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(175Kb)  |  收藏  |  浏览/下载：1677/403  |  提交时间：2010/10/29
Sqw Lasers  Ingaasp  Power  Fiber  Nm