In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator
	Liu, YF; Xie, J; Yang, JL; Tang, LJ; Yang, FH; Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2008
会议名称	9th International Conference on Solid-State and Integrated-Circuit Technology
会议录名称	2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
页码	VOLS 1-4: 2379-2382
会议日期	OCT 20-23, 2008
会议地点	Beijing, PEOPLES R CHINA
出版地	345 E 47TH ST, NEW YORK, NY 10017 USA
出版者	IEEE
ISBN	978-1-4244-2185-5
部门归属	[liu, yunfei; xie, jing; yang, jinling; tang, longjuan; yang, fuhua] chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Polycrystalline silicon (polysilicon) has been used as an important structural material for microelectro-mechnical systems (MEMS) because of its compatibility with standard integrated circuit (IC) processes. As the structural layer of micromechanical high resonance frequency (high-f) and high quality factor (high-Q) disk resonators, the low residual stress and low resistivity are desired for the polysilicon thin films. In the present work, we investigate the effect of deposition and annealing conditions on the residual stress and resistivity for in-situ deposited low pressure chemical vapor deposition (LPCVD) polysilicon films. Low residual stress (-100 MPa) was achieved in in-situ boron-doped polysilicon films deposited at 570 degrees C and annealed at 1000 degrees C for 4 hr. The as-deposited amorphous polysilicon films were crystallized by the rapid thermal annealing and have the (111)-preferred orientation, the low tensile residual stress is expected for this annealed film, the detailed description on this work will be reported soon. The controllable residual stress and resistivity make these films suitable for high-Q and bigh-f micro-mechanical disk resonators.
关键词	Films
学科领域	微电子学
主办者	IEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/8308
专题	中国科学院半导体研究所（2009年前）
通讯作者	Liu, YF, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Liu, YF,Xie, J,Yang, JL,et al. In-situ Boron-doped Low-stress LPCVD Polysilicon for Micromechanical Disk Resonator[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-4: 2379-2382.

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