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Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, Kyoto, JAPAN, OCT 15-18, 2007
作者:  Wang, XH;  Wang, XL;  Xiao, HL;  Feng, C;  Wang, XY;  Wang, BZ;  Yang, CB;  Wang, JX;  Wang, CM;  Ran, JX;  Hu, GX;  Li, JM;  Wang, XL, Chinese Acad Sci, Inst Semicond, Novel Mat Lab, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(217Kb)  |  收藏  |  浏览/下载：1899/329  |  提交时间：2010/03/09
Gas Sensors  Hemt Structures  Mobility  Temperature  Transistors  Growth  Mocvd  Layer  
Fabrication of improved FD SOIMOSFETs for suppressing edge effect 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Wang, N;  Li, N;  Liu, ZL;  Yu, F;  Li, GH;  Wang, N, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(933Kb)  |  收藏  |  浏览/下载：1238/227  |  提交时间：2010/03/09
Soi  Mosfet  
Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors 会议论文
2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 20-23, 2008
作者:  Wang Y;  Han WH;  Yang X;  Chen JJ;  Yang FH;  Wang, Y, Chinese Acad Sci, Res Ctr Semicond Integrated Technol, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(2039Kb)  |  收藏  |  浏览/下载：1456/318  |  提交时间：2010/03/09
Devices  
Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AIN/GaN heterostructures grown on sapphire substrates by MOCVD 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, XL;  Wang, CM;  Hu, GX;  Wang, JX;  Li, JP;  Wang, XL, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(266Kb)  |  收藏  |  浏览/下载：1868/347  |  提交时间：2010/03/29
Molecular-beam Epitaxy  2-dimensional Electron-gas  Bulk Gan  Optimization  Layers  Hemts  
Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Wang, CM;  Wang, XL;  Hu, GX;  Wang, JX;  Li, JP;  Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(335Kb)  |  收藏  |  浏览/下载：1237/297  |  提交时间：2010/03/29
High Breakdown Voltage  Mobility Transistors  Heterostructures  Sapphire  Ganhemts  
A direct digital frequency synthesizer with fourth-order phase domain Delta Sigma noise shaper and 12-bit current-steering DAC 会议论文
IEEE JOURNAL OF SOLID-STATE CIRCUITS, Kyoto, JAPAN, JUN 16-18, 2005
作者:  Dai, FF;  Ni, WN;  Yin, S;  Jaeger, RC;  Dai, FF, Auburn Univ, Dept Elect & Comp Engn, Auburn, AL 36849 USA. 电子邮箱地址: fasterdai@auburn.edu;  wnni@red.semi.ac.cn;  yshi@red.semi.ac.cn;  jaeger@eng.auburn.edu
Adobe PDF(1241Kb)  |  收藏  |  浏览/下载：1448/376  |  提交时间：2010/03/29
Cmos Integrated Circuits  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  收藏  |  浏览/下载：1287/394  |  提交时间：2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  收藏  |  浏览/下载：1547/426  |  提交时间：2010/11/15
Molecular Beam Epitaxy  Mobility  
Two-dimensional numerical simulation of the channel electron in an In0.52Al0.48As/In0.53Ga0.48As HEMT 会议论文
1997 IEEE HONG KONG ELECTRON DEVICES MEETING, PROCEEDINGS, HONG KONG, HONG KONG, 35672
作者:  Zhang XH;  Yang YF;  Wang ZG;  Zhang XH Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(211Kb)  |  收藏  |  浏览/下载：1019/246  |  提交时间：2010/10/29