Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures
	Wang, CM; Wang, XL; Hu, GX; Wang, JX; Li, JP; Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
	2006
会议名称	32nd International Symposium on Compound Semiconductors
会议录名称	Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
页码	Vol 3 no 3 3 (3): 486-489
会议日期	SEP 18-22, 2005
会议地点	Rust, GERMANY
出版地	605 THIRD AVE, NEW YORK, NY 10158-0012 USA
出版者	WILEY-VCH, INC
ISSN	1610-1634
部门归属	chinese acad sci, inst semicond, beijing 100083, peoples r china
摘要	Improved electrical properties of AlxGa1-xN/GaN high electron mobility transistor (HEMT) structures grown by metalorganic chemical vapor deposition (MOCVD) were achieved through increasing the Al mole fraction in the AlGaN barrier layers. An average sheet resistance of 326.6 Omega/sq and a good resistance uniformity of 98% were obtained for a 2-inch Al0.38Ga0 62N/GaN HEMT structure. The surface morphology of AlxGa1-xN/GaN HEMT structures strongly correlates with the Al content. More defects were formed with increasing Al content due to the increase of tensile strain, which limits further reduction of the sheet resistance. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.
关键词	High Breakdown Voltage Mobility Transistors Heterostructures Sapphire Ganhemts
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9872
专题	中国科学院半导体研究所（2009年前）
通讯作者	Wang, CM, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Wang, CM,Wang, XL,Hu, GX,et al. Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures[C]. 605 THIRD AVE, NEW YORK, NY 10158-0012 USA:WILEY-VCH, INC,2006:Vol 3 no 3 3 (3): 486-489.

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