SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors
Wang Y; Han WH; Yang X; Chen JJ; Yang FH; Wang, Y, Chinese Acad Sci, Res Ctr Semicond Integrated Technol, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
2008
Conference Name9th International Conference on Solid-State and Integrated-Circuit Technology
Source Publication2008 9TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED-CIRCUIT TECHNOLOGY
PagesVOLS 1-4: 393-395
Conference DateOCT 20-23, 2008
Conference PlaceBeijing, PEOPLES R CHINA
Publication Place345 E 47TH ST, NEW YORK, NY 10017 USA
PublisherIEEE
ISBN978-1-4244-2185-5
AbstractThe traditional monostable-bistable transition logic element (MOBILE) structure is usually composed of resonant tunneling diodes (RTD). This letter describes a new type MOBILE structure consisting of single-electron transistors (i.e. SET-MOBILE). The analytical model of single-electron transistors ( SET) has been considered three states (including an excited state) of the discrete quantum energy levels. The simulation results show negative differential conductance (NDC) characteristics in I-DS-V-DS curve. The SET-MOBILE utilizing NDC characteristics can successfully realize the basic logic functions as the RTD-MOBILE.
metadata_83[wang, ying; han, weihua; yang, xiang; chen, jianjun; yang, fuhua] chinese acad sci, res ctr semicond integrated technol, inst semicond, beijing 100083, peoples r china
KeywordDevices
Funding OrganizationIEEE Beijing Sect.; Chinese Inst Elect.; IEEE Electron Devices Soc.; IEEE EDS Beijing Chapter.; IEEE Solid State Circuits Soc.; IEEE Circuites & Syst Soc.; IEEE Hong Kong EDS, SSCS Chapter.; IEEE SSCS Beijing Chapter.; Japan Soc Appl Phys.; Elect Div IEEE.; URSI Commiss D.; Inst Elect Engineers Korea.; Assoc Asia Pacific Phys Soc.; Peking Univ, IEEE EDS Student Chapter.
Subject Area微电子学
Indexed By其他
Language英语
Document Type会议论文
Identifierhttp://ir.semi.ac.cn/handle/172111/8272
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorWang, Y, Chinese Acad Sci, Res Ctr Semicond Integrated Technol, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Recommended Citation
GB/T 7714
Wang Y,Han WH,Yang X,et al. Monostable-Bistable Transition Logic Element (MOBILE) Model for Single-Electron Transistors[C]. 345 E 47TH ST, NEW YORK, NY 10017 USA:IEEE,2008:VOLS 1-4: 393-395.
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