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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研... [12]
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In situ annealing during the growth of relaxed SiGe
会议论文
OPTICAL AND INFRARED THIN FILMS, 4094, SAN DIEGO, CA, 36739
作者:
Li DZ
;
Huang CJ
;
Cheng BW
;
Wang HJ
;
Yu Z
;
Zhang CH
;
Yu JZ
;
Wang QM
;
Li DZ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect Beijing 100083 Peoples R China.
Adobe PDF(1540Kb)
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  |  
浏览/下载:1145/204
  |  
提交时间:2010/10/29
Ultrahigh Vacuum Chemical Vapor Deposition
Sige
Refractive High Energy Electron Diffraction
Tansmission Electron Microscopy
Double Crystal X-ray Diffraction
Mobility 2-dimensional Electron
Critical Thickness
Strained Layers
Ge
Relaxation
Epilayers
Si1-xgex
Gesi/si
Gases
A model of dislocations at the interface of the bonded wafers
会议论文
OPTICAL INTERCONNECTS FOR TELECOMMUNICATION AND DATA COMMUNICATIONS, 4225, BEIJING, PEOPLES R CHINA, NOV 08-10, 2000
作者:
Han WH
;
Yu JZ
;
Wang LC
;
Wei HZ
;
Zhang XF
;
Wang QM
;
Han WH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(76Kb)
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  |  
浏览/下载:1525/266
  |  
提交时间:2010/10/29
Wafer Bonding
Heteroepitaxy
Lattice Mismatch
Edge-like Dislocations
Thermal Stress
60 Degrees Dislocation Lines
Gaas
Stoichiometry in GaAs grown in outer space measured nondestructively
会议论文
NONDESTRUCTIVE CHARACTERIZATION OF MATERIALS IX, 497, SYDNEY, AUSTRALIA, JUN 28-JUL 02, 1999
作者:
Chen NF
;
Zhong XG
;
Lin LY
;
Chen NF Chinese Acad Sci Lab Semicond Mat Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:839/0
  |  
提交时间:2010/10/29
Semiinsulating Gallium-arsenide
Crystals
Defects
Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Peng CS
;
Chen H
;
Zhao ZY
;
Li JH
;
Dai DY
;
Huang Q
;
Zhou JM
;
Zhang YH
;
Tung CH
;
Sheng TT
;
Wang J
;
Peng CS Chinese Acad Sci Inst Phys POB 603 Beijing 100080 Peoples R China.
Adobe PDF(208Kb)
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  |  
浏览/下载:1471/311
  |  
提交时间:2010/11/15
Threading Dislocation
Si(100)
Layers
Films
Structural properties of SI-GaAs grown in space
会议论文
GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES, 24 (10), NAGOYA, JAPAN, JUL 12-19, 1998
作者:
Chen NF
;
Wang YT
;
Zhong XR
;
Lin LY
;
Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:890/0
  |  
提交时间:2010/11/15
Semiinsulating Gallium-arsenide
Microgravity
Stoichiometry
Influence of crystal perfection on the reverse leakage current of the SiGe Si p-n heterojunction diodes
会议论文
JOURNAL OF CRYSTAL GROWTH, 201, CANNES, FRANCE, AUG 31-SEP 04, 1998
作者:
Liu XF
;
Liu JP
;
Li JP
;
Wang YT
;
Li LY
;
Sun DZ
;
Kong MY
;
Lin LY
;
Liu XF Chinese Acad Sci Inst Semicond Mat Ctr Beijing 100083 Peoples R China.
收藏
  |  
浏览/下载:888/0
  |  
提交时间:2010/11/15
Layers
Structural and optical changes in GaAs/InAs/GaAs structure induced by thermal annealing
会议论文
1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, BEIJING, PEOPLES R CHINA, OCT 21-23, 1998
作者:
Mo QW
;
Fan TW
;
Gong Q
;
Wu J
;
Wang ZG
;
Bai YQ
;
Zhang W
;
Mo QW Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(201Kb)
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  |  
浏览/下载:1395/316
  |  
提交时间:2010/10/29
Molecular-beam Epitaxy
Coherent Islands
Gaas
Growth
Dots
Dislocations
Temperature
Mechanisms
Si(001)
Ingaas
Observation of defects in GaN epilayers
会议论文
DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160, TEMPLIN, GERMANY, SEP 07-10, 1997
作者:
Kang JY
;
Liu XL
;
Ogawa T
;
Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan.
Adobe PDF(235Kb)
  |  
收藏
  |  
浏览/下载:1261/215
  |  
提交时间:2010/11/15
Scattering
Sapphire
Growth
New method for the growth of highly uniform quantum dots
会议论文
MICROELECTRONIC ENGINEERING, 43-4, LISBON, PORTUGAL, MAY 19-21, 1997
作者:
Pan D
;
Zeng YP
;
Kong MY
;
Pan D Chinese Acad Sci Inst Semicond Mat Ctr POB 912 Beijing 100083 Peoples R China. 电子邮箱地址: dongpan@red.senu.ac.cn
Adobe PDF(274Kb)
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  |  
浏览/下载:1034/178
  |  
提交时间:2010/11/15
Self-formed Quantum Dot
Stranski-krastanow Growth Mode
Superlattice
Molecular-beam Epitaxy
Ingaas
Gaas
Dislocations
Multilayers
Defects
Strain
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions
会议论文
ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523, SAN FRANCISCO, CA, APR 15-16, 1998
作者:
Wang HM
;
Zeng YP
;
Pan L
;
Zhou HW
;
Zhu ZP
;
Kong MY
;
Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(1119Kb)
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  |  
浏览/下载:867/155
  |  
提交时间:2010/10/29