Observation of defects in GaN epilayers
Kang JY; Liu XL; Ogawa T; Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan.
1998
会议名称7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP-VII)
会议录名称DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160
页码347-350
会议日期SEP 07-10, 1997
会议地点TEMPLIN, GERMANY
出版地TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX
出版者IOP PUBLISHING LTD
ISSN0951-3248
ISBN0-7503-0500-2
部门归属gakushuin univ, dept phys, tokyo 171, japan; xiamen univ, dept phys, xiamen 361005, peoples r china; inst semicond, beijing 100083, peoples r china
摘要GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations.
关键词Scattering Sapphire Growth
学科领域半导体物理
主办者Deutsch Forsch Gemeinschaft.; Freiberger Compound Mat.; Gesell Forderung Angewandten Opt Optoelektr Quantenelektr & Spektroskopie EV.; Wacker Siltron AG.
收录类别CPCI-S
语种英语
文献类型会议论文
条目标识符http://ir.semi.ac.cn/handle/172111/15083
专题中国科学院半导体研究所(2009年前)
通讯作者Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan.
推荐引用方式
GB/T 7714
Kang JY,Liu XL,Ogawa T,et al. Observation of defects in GaN epilayers[C]. TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX:IOP PUBLISHING LTD,1998:347-350.
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