Knowledge Management System Of Institute of Semiconductors,CAS
Observation of defects in GaN epilayers | |
Kang JY; Liu XL; Ogawa T; Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan. | |
1998 | |
会议名称 | 7th International Conference on Defect Recognition and Image Processing in Semiconductors (DRIP-VII) |
会议录名称 | DEFECT RECOGNITION AND IMAGE PROCESSING IN SEMICONDUCTORS 1997, 160 |
页码 | 347-350 |
会议日期 | SEP 07-10, 1997 |
会议地点 | TEMPLIN, GERMANY |
出版地 | TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX |
出版者 | IOP PUBLISHING LTD |
ISSN | 0951-3248 |
ISBN | 0-7503-0500-2 |
部门归属 | gakushuin univ, dept phys, tokyo 171, japan; xiamen univ, dept phys, xiamen 361005, peoples r china; inst semicond, beijing 100083, peoples r china |
摘要 | GaN epilayers grown on sapphire substrates nitridated for various lengthy periods were investigated by light scattering tomography (LST) and Raman scattering. In the LST images of the plane-view epilayers, the light scattering defects distribute in [<11(2)over bar 0>] directions. The defect density is lower in epilayer grown on substrate nitridated for a longer period. The defects are believed to be straight threading edge dislocations on {<1(1)over bar 00>} planes. The Raman shift of E-2 mode is larger in the sample grown on substrate nitridated for a longer period. Our results show that the stress is higher in the sample with fewer dislocations. |
关键词 | Scattering Sapphire Growth |
学科领域 | 半导体物理 |
主办者 | Deutsch Forsch Gemeinschaft.; Freiberger Compound Mat.; Gesell Forderung Angewandten Opt Optoelektr Quantenelektr & Spektroskopie EV.; Wacker Siltron AG. |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/15083 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Kang JY Gakushuin Univ Dept Phys Tokyo 171 Japan. |
推荐引用方式 GB/T 7714 | Kang JY,Liu XL,Ogawa T,et al. Observation of defects in GaN epilayers[C]. TECHNO HOUSE, REDCLIFFE WAY, BRISTOL, ENGLAND BS1 6NX:IOP PUBLISHING LTD,1998:347-350. |
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