Knowledge Management System Of Institute of Semiconductors,CAS
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions | |
Wang HM; Zeng YP; Pan L; Zhou HW; Zhu ZP; Kong MY; Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China. | |
1998 | |
会议名称 | Symposium on Electron Microscopy of Semiconducting Materials and ULSI Devices at the Spring Materials-Research-Society Meeting |
会议录名称 | ELECTRON MICROSCOPY OF SEMICONDUCTING MATERIALS AND ULSI DEVICES, 523 |
页码 | 231-234 |
会议日期 | APR 15-16, 1998 |
会议地点 | SAN FRANCISCO, CA |
出版地 | 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA |
出版者 | MATERIALS RESEARCH SOCIETY |
ISSN | 0272-9172 |
ISBN | 1-55899-429-7 |
部门归属 | chinese acad sci, inst semicond, div novel mat, beijing 100083, peoples r china |
摘要 | Using Transmission Electron Microscopy, we studied the misfit and threading dislocations in InAs epilayers. All the samples, with thickness around 0.5 mu m, were grown on GaAs(001) substrates by molecular beam epitaxy under As-rich or in-rich conditions. The As-rich growth undergoes 2D-3D mode transition process, which was inhibited under In-rich surface. High step formation energy under As-deficient reconstruction inhibits the formation of 3D islands and leads to 2D growth. The mechanism of misfit dislocations formation was different under different growth condition which caused the variation of threading dislocation density in the epilayers. |
学科领域 | 半导体材料 |
主办者 | Mat Res Soc. |
收录类别 | CPCI-S |
语种 | 英语 |
文献类型 | 会议论文 |
条目标识符 | http://ir.semi.ac.cn/handle/172111/13845 |
专题 | 中国科学院半导体研究所(2009年前) |
通讯作者 | Wang HM Chinese Acad Sci Inst Semicond Div Novel Mat POB 912 Beijing 100083 Peoples R China. |
推荐引用方式 GB/T 7714 | Wang HM,Zeng YP,Pan L,et al. Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions[C]. 506 KEYSTONE DRIVE, WARRENDALE, PA 15088-7563 USA:MATERIALS RESEARCH SOCIETY,1998:231-234. |
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