Structural properties of SI-GaAs grown in space

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Structural properties of SI-GaAs grown in space
	Chen NF; Wang YT; Zhong XR; Lin LY; Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
	1999
会议名称	G0 1 Symposium of COSPAR Scientific Commission G Held at the 32nd COSPAR Scientific Assembly
会议录名称	GRAVITATIONAL EFFECTS IN MATERIALS AND FLUID SCIENCES, 24 (10)
页码	1211-1214
会议日期	JUL 12-19, 1998
会议地点	NAGOYA, JAPAN
出版地	THE BOULEVARD LANGFORD LANE KIDLINGTON, OXFORD OX5 1GB, ENGLAND
出版者	PERGAMON PRESS LTD
ISSN	0273-1177
部门归属	chinese acad sci, inst semicond, lab semicond mat sci, beijing 100083, peoples r china
摘要	The structural properties of Semi-insulating gallium arsenide (SI-GaAs) crystal grown with power-travelling technique in space have been studied by double-crystal x-ray diffractometry and chemical etching. The quality of the crystal was first evaluated by x-ray rocking-curve method. The full width at half maximum of x-ray rocking curve in space-grown SI-GaAs is 9.4+/-0.08 are seconds. The average density of dislocations revealed by molten KOH is 2.0 X 10(4) cm(-2), and the highest density is 3.1 X 10(4) cm(-2). The stoichiometry in the single crystal grown in space is improved as well. Unfortunately, the rear of the ingot grown in space is polycrystalline owing to being out of control of power. (C) 1999 COSPAR. Published by Elsevier Science Ltd.
关键词	Semiinsulating Gallium-arsenide Microgravity Stoichiometry
学科领域	半导体材料
主办者	Comm Space Res.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/15011
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen NF Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen NF,Wang YT,Zhong XR,et al. Structural properties of SI-GaAs grown in space[C]. THE BOULEVARD LANGFORD LANE KIDLINGTON, OXFORD OX5 1GB, ENGLAND:PERGAMON PRESS LTD,1999:1211-1214.