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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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中国科学院半导体研究... [9]
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Corrugated surfaces formed on GaAs (331)a substrates: The template for laterally ordered InGaAs nanowires
会议论文
International Journal of Nanoscience丛书标题: International Journal of Nanoscience Series, Beijing, PEOPLES R CHINA, NOV 24-27, 2004
作者:
Miao, ZH (Miao, Zhenhua)
;
Gong, Z (Gong, Zheng)
;
Fang, ZD (Fang, Zhidan)
;
Niu, ZC (Niu, Zhichuan)
;
Gong, Z, Chinese Acad Sci, Inst Semicond, Natl Lab Superlattice & Microstruct, PO Box 912, Beijing 100083, Peoples R China.
Adobe PDF(378Kb)
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浏览/下载:1489/291
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提交时间:2010/03/29
Atomic Hydrogen
Molecular Beam Epitaxy
Step Arrays
Molecular-beam Epitaxy
Atomic-hydrogen
Vicinal Surface
Quantum Dots
Growth
Temperature
Irradiation
Mechanism
Mbe
Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G
会议论文
ICO20 MATERIALS AND NANOSTRUCTURES丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Changchun, PEOPLES R CHINA, AUG 21-26, 2005
作者:
Shen, WJ
;
Duan, Y
;
Wang, J
;
Wang, QY
;
Zeng, YP
;
Shen, WJ, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100083, Peoples R China.
Adobe PDF(402Kb)
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浏览/下载:1692/615
  |  
提交时间:2010/03/29
Zno
Mocvd
Thermal Annealing
Photoluminescence
X-ray Diffraction
Atomic Force Microscopy
Pulsed-laser Deposition
Thin-films
Photoluminescence
Mechanisms
Epitaxy
Cvd
Si
Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient
会议论文
MICROELECTRONIC ENGINEERING, 66 (1-4), XIAN, PEOPLES R CHINA, JUN 10-14, 2002
作者:
Wang QY
;
Wang JH
;
Deng HF
;
Lin LY
;
Wang QY Chinese Acad Sci Inst Semicond Mat Sci Ctr Beijing 100083 Peoples R China.
Adobe PDF(132Kb)
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浏览/下载:1737/328
  |  
提交时间:2010/11/15
Neutron Irradiation
Annealing
Defects In Silicon
Spectra
Characterization of defects and whole wafer uniformity of annealed undoped semi-insulating InP wafers
会议论文
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 91, RIMINI, ITALY, SEP 24-28, 2001
作者:
Zhao YW
;
Sun NF
;
Dong HW
;
Jiao JH
;
Zhao JQ
;
Sun TN
;
Lin LY
;
Sun NF Hebei Semicond Res Inst POB 179-40 Shijiazhuang 050002 Hebei Peoples R China.
Adobe PDF(179Kb)
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浏览/下载:1619/289
  |  
提交时间:2010/11/15
Indium Phosphide
Semi-insulating
Annealing
Picts
Photoluminescence
Semiinsulating Inp
Indium-phosphide
Fe
Photoluminescence
Temperature
The influence of nitrogen clustering effect on optical transitions in GaInNAs/GaAs quantum wells
会议论文
INTERNATIONAL WORKSHOP ON NITRIDE SEMICONDUCTORS, PROCEEDINGS, AACHEN, GERMANY, JUL 22-25, 2002
作者:
Jiang DS
;
Liang XG
;
Sun BQ
;
Bian L
;
Li LH
;
Pan Z
;
Wu RG
;
Jiang DS Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(240Kb)
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浏览/下载:1372/283
  |  
提交时间:2010/10/29
Luminescence
Localization
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:
Gao F
;
Lin YX
;
Huang DD
;
Li JP
;
Sun DZ
;
Kong MY
;
Zeng YP
;
Li JM
;
Lin LY
;
Gao F Chinese Acad Sci Ctr Mat Sci Inst Semicond Beijing 10083 Peoples R China.
Adobe PDF(96Kb)
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浏览/下载:1743/419
  |  
提交时间:2010/11/15
Annealing
Molecular Beam Epitaxy
Germanium Silicon Alloys
Semiconducting Materials
Strain Relaxation
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
会议论文
JOURNAL OF CRYSTAL GROWTH, 221, SAPPORO, JAPAN, JUN 05-09, 2000
作者:
Lu DC
;
Wang CX
;
Yuan HR
;
Liu XL
;
Wang XH
;
Lu DC Chinese Acad Sci Inst Semicond Lab Semicond Mat & Sci POB 912 Beijing 100083 Peoples R China.
Adobe PDF(428Kb)
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  |  
浏览/下载:1342/179
  |  
提交时间:2010/11/15
Gan
Annealing Treatment
In-doping
Movpe
Photoluminescence
Chemical-vapor-deposition
Phase Epitaxy
Buffer Layer
Films
Sapphire
First charge collection and position-precision data on the medium-resistivity silicon strip detectors before and after neutron irradiation up to 2x10(14) n/cm(2)
会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT, 426 (1), FLORENCE, ITALY, MAR 04-06, 1998
作者:
Li Z
;
Dezilllie B
;
Eremin V
;
Li CJ
;
Verbitskaya E
;
Li Z Brookhaven Natl Lab Bldg 535BPOB 5000 Upton NY 11973 USA.
Adobe PDF(429Kb)
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浏览/下载:1538/327
  |  
提交时间:2010/11/15
Strip Detectors
Silicon Detectors
Annealing
Simulation
Irradiation
N-eff
Junction Detectors
Radiation-damage
Models
The enhancement of diffusion by strain of InAs quantum dots in a GaAs matrix
会议论文
PHYSICS OF LOW-DIMENSIONAL STRUCTURES, 12, LINCOLN, NEBRASKA, JUL 08-11, 1997
作者:
Wang ZM
;
Feng SL
;
Lu ZD
;
Zhao Q
;
Yang XP
;
Chen ZG
;
Xu ZY
;
Zheng HZ
;
Wang ZM Chinese Acad Sci Inst Semicond Natl Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China.
Adobe PDF(2780Kb)
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浏览/下载:1202/142
  |  
提交时间:2010/11/15
Growth
Interdiffusion
Islands
Scale