SEMI OpenIR  > 中科院半导体照明研发中心
Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes
Wang LC (Wang, Liancheng); Zhang YY (Zhang, Yiyun); Li X (Li, Xiao); Liu ZQ (Liu, Zhiqiang); Guo EQ (Guo, Enqing); Yi XY (Yi, Xiaoyan); Wang JX (Wang, Junxi); Zhu HW (Zhu, Hongwei); Wang GH (Wang, Guohong)
2012
Source PublicationAPPLIED PHYSICS LETTERS
Volume101Issue:6Pages:061102
Subject Area半导体器件
Indexed BySCI
Language英语
Date Available2013-04-02
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/23856
Collection中科院半导体照明研发中心
Recommended Citation
GB/T 7714
Wang LC ,Zhang YY ,Li X ,et al. Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes[J]. APPLIED PHYSICS LETTERS,2012,101(6):061102.
APA Wang LC .,Zhang YY .,Li X .,Liu ZQ .,Guo EQ .,...&Wang GH .(2012).Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes.APPLIED PHYSICS LETTERS,101(6),061102.
MLA Wang LC ,et al."Partially sandwiched graphene as transparent conductive layer for InGaN-based vertical light emitting diodes".APPLIED PHYSICS LETTERS 101.6(2012):061102.
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