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Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文
Physica B: Condensed Matter, 2013, 卷号: 414, 页码: 110-114
Authors:  Li, Zhidong;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen;  Jing, Liang;  Ding, Jieqin;  Hou, Xun
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High performance AlGaNGaN power switch with Si3N4 Insulation 期刊论文
The European Physical Journal Applied Physics, 2013, 卷号: 61, 期号: 1, 页码: 10101
Authors:  Lin, Defeng;  Wang, Xiaoliang;  Xiao, Hongling;  Kang, He;  Wang, Cuimei;  Jiang, Lijuan;  Feng, Chun;  Chen, Hong;  Deng, Qingwen;  Bi, Yang;  Zhang, Jingwen;  Hou, Xun
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Enhanced performance of InGaN/GaN multiple quantum well solar cells with patterned sapphire substrate 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 12, 页码: 124004
Authors:  Jing, Liang;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen;  Li, Zhidong;  Ding, Jieqin;  Wang, Zhanguo;  Hou, Xun
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InGaN 太阳能电池基础研究 学位论文
, 北京: 中国科学院研究生院, 2013
Authors:  邓庆文
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The growth and characterization of GaN films on cone-shaped patterned sapphire by MOCVD 期刊论文
Journal of Semiconductors, 2013, 卷号: 34, 期号: 11, 页码: 113002
Authors:  Liang, Jing;  Hongling, Xiao;  Xiaoliang, Wang;  Cuimei, Wang;  Qingwen, Deng;  Zhidong, Li;  Jieqin, Ding;  Zhanguo, Wang;  Xun, Hou
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Theoretical simulations of InGaN/Si mechanically stacked two-junction solar cell 期刊论文
PHYSICA B-CONDENSED MATTER, 2013, 卷号: 414, 页码: 110-114
Authors:  Li, Zhidong;  Xiao, Hongling;  Wang, Xiaoliang;  Wang, Cuimei;  Deng, Qingwen;  Jing, Liang;  Ding, Jieqin
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An investigation on InxGa1-xN/GaN multiple quantum well solar cells 期刊论文
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 2011, 卷号: 44, 期号: 26, 页码: Art. No. 265103
Authors:  Deng QW;  Wang XL;  Xiao HL;  Wang CM;  Yin HB;  Chen H;  Hou QF;  Lin DF;  Li JM;  Wang ZG;  Hou X
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Fundamental-band Gap  Phase-separation  Efficiency  Inn  Emission  Layers  Model  
Theoretical study on InxGa1-xN/GaN quantum dots solar cell 期刊论文
PHYSICA B-CONDENSED MATTER, 2011, 卷号: 406, 期号: 1, 页码: 73-76
Authors:  Deng QW;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Yin HB;  Hou QF;  Li JM;  Wang ZG;  Hou X;  Deng, QW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. daven@semi.ac.cn
Adobe PDF(459Kb)  |  Favorite  |  View/Download:2132/623  |  Submit date:2011/07/05
Efficiency  Quantum Dot  Gan  Efficiency  
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 98, 期号: 10, 页码: Article no.102104
Authors:  Hou QF;  Wang XL;  Xiao HL;  Wang CM;  Yang CB;  Yin HB;  Deng QW;  Li JM;  Wang ZG;  Hou X;  Hou, QF, Chinese Acad Sci, Ctr Mat Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. qfhou@semi.ac.cn
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Quantum-well-structure  Algan/gan Heterostructure  Yellow Luminescence  Deep Levels  Trap  Performance  Frequency  Epilayers  Origin  Diodes  
Computational Investigation of InxGa1-xN/InN Quantum-Dot Intermediate-Band Solar Cell 期刊论文
CHINESE PHYSICS LETTERS, 2011, 卷号: 28, 期号: 1, 页码: Article no.18401
Authors:  Deng QW;  Wang XL;  Yang CB;  Xiao HL;  Wang CM;  Yin HB;  Hou QF;  Bi Y;  Li JM;  Wang ZG;  Hou X;  Deng, QW, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China. daven@semi.ac.cn
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Efficiency