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| Effect of Mg doping concentration of electron blocking layer on the performance of GaN‑based laser diodes 期刊论文
Applied Physics B, 2019, 卷号: 125, 页码: 235
Authors: J. Yang ; D. G. Zhao ; J. J. Zhu ; Z. S. Liu ; D. S. Jiang ; P. Chen ; F. Liang ; S. T. Liu ; Y. Xing
 Adobe PDF(1223Kb) |  Favorite | View/Download：31/0 | Submit date：2020/07/31 |
| Electroluminescence property improvement by adjusting quantum wells’ position relative to p-doped region in InGaN/GaN multiple-quantum-well light emitting diodes 期刊论文
AIP Advances, 2017, 卷号: 7, 页码: 035103
Authors: P. Chen; D. G. Zhao; D. S. Jiang; H. Long; M. Li; J. Yang; J. J. Zhu; Z. S. Liu; X. J. Li; W. Liu; X. Li; F. Liang; J. P. Liu; B. S. Zhang; H. Yang
Adobe PDF(5388Kb) | Favorite | View/Download：581/3 | Submit date：2018/07/11 |
| Evolution of differential efficiency in blue InGaN laser diodes before and after a lasing threshold 期刊论文
Applied Optics, 2017, 卷号: 56, 期号: 9, 页码: 2462-2466
Authors: X. LI; Z. S. LIU; D. G. ZHAO; D. S. JIANG; P. CHEN; J. J. ZHU; J. YANG; W. LIU; X. G. HE; X. J. LI; F. LIANG; S. T. LIU; Y. XING; L. Q. ZHANG; M. LI; J. ZHANG
Adobe PDF(723Kb) | Favorite | View/Download：560/0 | Submit date：2018/07/11 |
| A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended SiWafer by Conventional Chemical Vapor Deposition 期刊论文
ECS Journal of Solid State Science and Technology, 2017, 卷号: 6, 期号: 1, 页码: 27-31
Authors: X. F. Liu; z G. G. Yan; Z. W. Shen; Z. X.Wen; L. X. Tian; W. S. Zhao; L. Wang; M. Guan; F. Zhang; G. S. Sun; Y. P. Zeng
Adobe PDF(761Kb) | Favorite | View/Download：176/0 | Submit date：2018/06/15 |
| Investigation on the corrosive effect of NH3 during InGaN/GaN multi-quantum well growth in light emitting diodes 期刊论文
Scientific Reports, 2017, 卷号: 7, 页码: 44850
Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; W. Liu; X. Li; F. Liang; S. T. Liu; L. Q. Zhang; H. Yang
Adobe PDF(1025Kb) | Favorite | View/Download：83/0 | Submit date：2018/11/30 |
| Performance of InGaN based green laser diodes improved by using an asymmetric InGaN/InGaN multi-quantum well active region 期刊论文
OPTICS EXPRESS, 2017, 卷号: 25, 期号: 9, 页码: 9595-9602
Authors: J. YANG; D. G. ZHAO; D. S. JIANG; X. LI; F. LIANG; P. CHEN; J. J. ZHU; Z. S. LIU; S. T. LIU; L. Q. ZHANG; M. LI
Adobe PDF(3329Kb) | Favorite | View/Download：81/0 | Submit date：2018/11/30 |
| Photoelectron spectroscopy study of AlN films grown on n-type 6H-SiC by MOCVD 期刊论文
Applied Physics A, 2016, 卷号: 122, 期号: 9
Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; X. Li; S. T. Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
Adobe PDF(1612Kb) | Favorite | View/Download：205/2 | Submit date：2017/03/10 |
| The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content 期刊论文
physica status solidi (a), 2016, 卷号: 213, 期号: 8, 页码: 2223–2228
Authors: X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang
Adobe PDF(889Kb) | Favorite | View/Download：277/1 | Submit date：2017/03/10 |
| Observation of negative differential resistance in GaN-based multiple-quantum-well light-emitting diodes 期刊论文
Journal of Vacuum Science & Technology B, 2016, 卷号: 34, 期号: 1, 页码: 011206
Authors: J. Yang; D. G. Zhao; D. S. Jiang; P. Chen; J. J. Zhu; Z. S. Liu; L. C. Le; X. J. Li; X. G. He; J. P. Liu; L. Q. Zhang; H. Yang
Adobe PDF(894Kb) | Favorite | View/Download：337/3 | Submit date：2017/03/10 |
| XPS study of impurities in Si-doped AlN film 期刊论文
Surface and Interface Analysis, 2016, 卷号: 48, 期号: 12, 页码: 1305–1309
Authors: F. Liang; P. Chen; D. G. Zhao; D. S. Jiang; Z. J. Zhao; Z. S. Liu; J. J. Zhu; J. Yang; L. C. Le; W. Liu; X.G. He; X. J. Li; X Li; S. T Liu; H. Yang; J. P. Liu; L. Q. Zhang; Y. T. Zhang; G. T. Du
Adobe PDF(360Kb) | Favorite | View/Download：221/4 | Submit date：2017/03/10 |
