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The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content
X. Li; D. G. Zhao*; D. S. Jiang; P. Chen; Z. S. Liu; J. J. Zhu; J. Yang; W. Liu; X. G. He; X. J. Li; F. Liang; L. Q. Zhang; J. P. Liu; H. Yang
2016
Source Publicationphysica status solidi (a)
Volume213Issue:8Pages:2223–2228
Subject Area光电子学
Indexed BySCI
Date Available2017-03-10
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/27876
Collection光电子研究发展中心
Recommended Citation
GB/T 7714
X. Li,D. G. Zhao*,D. S. Jiang,et al. The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content[J]. physica status solidi (a),2016,213(8):2223–2228.
APA X. Li.,D. G. Zhao*.,D. S. Jiang.,P. Chen.,Z. S. Liu.,...&H. Yang.(2016).The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content.physica status solidi (a),213(8),2223–2228.
MLA X. Li,et al."The effectiveness of electron blocking layer in InGaN-based laser diodes with different indium content".physica status solidi (a) 213.8(2016):2223–2228.
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