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Probing the semiconductor to semimetal transition in InAs/GaSb double quantum wells by magneto-infrared spectroscopy 期刊论文
PHYSICAL REVIEW B, 2017, 卷号: 95, 期号: 4, 页码: 045116
Authors:  Y. Jiang;  S. Thapa;  G. D. Sanders;  C. J. Stanton;  Q. Zhang;  J. Kono;  W. K. Lou;  K. Chang;  S. D. Hawkins;  J. F. Klem;  W. Pan;  D. Smirnov;  Z. Jiang
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Ferromagnetic Interfacial Interaction and the Proximity Effect in a Co2FeAl/(Ga,Mn)As Bilayer 期刊论文
Physical Review Letters, 2013, 卷号: 111, 期号: 2, 页码: 027203
Authors:  Nie, S. H.;  Chin, Y. Y.;  Liu, W. Q.;  Tung, J. C.;  Lu, J.;  Lin, H. J.;  Guo, G. Y.;  Meng, K. K.;  Chen, L.;  Zhu, L. J.;  Pan, D.;  Chen, C. T.;  Xu, Y. B.;  Yan, W. S.;  Zhao, J. H.
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Polarization of the edge emission from Ag/InGaAsP Schottky plasmonic diode 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 102, 期号: 6, 页码: 061112
Authors:  Wang, C.;  Qu, H. J.;  Chen, W. X.;  Ran, G. Z.;  Yu, H. Y.;  Niu, B.;  Pan, J. Q.;  Wang, W.
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Hybrid InGaAsP-Si Evanescent Laser by Selective-Area Metal-Bonding Method 期刊论文
Photonics Technology Letters, 2013, 卷号: 25, 期号: 12, 页码: 1180 - 1183
Authors:  Yuan, L. ,Tao, L.;  Yu, H.;  Chen, W.;  Lu, D.;  Li, Y.;  Ran, G.;  Pan, J.
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模式相干的双模半导体激光器结构 专利
专利类型: 发明, 申请日期: 2008-12-03, 公开日期: 2009-06-04, 2009-06-11
Inventors:  王列松;  赵玲娟;  王圩;  朱洪亮;  潘教青;  梁松
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吸收型增益耦合分布反馈布拉格光栅的制作方法 专利
专利类型: 发明, 申请日期: 2008-01-09, 公开日期: 2009-06-04, 2009-06-11
Inventors:  冯文;  王宝军;  潘教青;  赵玲娟;  朱洪亮;  王圩
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掩埋结构铝铟镓砷分布反馈激光器的制作方法 专利
专利类型: 发明, 申请日期: 2007-11-14, 公开日期: 2009-06-04, 2009-06-11
Inventors:  冯文;  潘教青;  周帆;  王宝军;  赵玲娟;  朱洪亮;  王圩
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用于光时分复用系统的单片集成光发射器的制作方法 专利
专利类型: 发明, 申请日期: 2007-01-31, 公开日期: 2009-06-04, 2009-06-11
Inventors:  赵谦;  潘教青;  张靖;  王圩
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采用单边大光腔结构改善电吸收调制器的光场分布 期刊论文
物理学报, 2007, 卷号: 56, 期号: 5, 页码: 2751-2755
Authors:  杨华;  朱洪亮;  潘教青;  冯文;  谢红云;  周帆;  安欣;  边静;  赵玲娟;  陈娓兮;  王圩
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具有波长蓝移效应的掩埋异质结构半导体光器件及方法 专利
专利类型: 发明, 申请日期: 2006-12-06, 公开日期: 2009-06-04, 2009-06-11
Inventors:  丁颖;  王圩;  潘教青;  王宝军;  陈娓兮
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