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Growth of GaN film on Si (111) substrate using AlN sandwich structure as buffer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 318, 期号: 1, 页码: 464-467
Authors:  Pan X;  Wei M;  Yang CB;  Xiao HL;  Wang CM;  Wang XL;  Pan, X, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, Beijing 100864, Peoples R China. xpan@semi.ac.cn
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Sandwich Structure  Stress  Aluminum Nitride  Gallium Nitride  Silicon  Phonon Deformation Potentials  Wurtzite Aln  Silicon  Stress  Transistors  Epitaxy  Layers  
Surface characterization of AlGaN grown on Si (111) substrates 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2011, 卷号: 331, 期号: 1, 页码: 29-32
Authors:  Pan X;  Wang XL;  Xiao HL;  Wang CM;  Feng C;  Jiang LJ;  Yin HB;  Chen H;  Pan, X (reprint author), Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China, xpan@semi.ac.cn
Adobe PDF(596Kb)  |  Favorite  |  View/Download:925/157  |  Submit date:2012/01/06
Molecular-beam Epitaxy  Field-effect Transistors  Vapor-phase Epitaxy  Group-iii Nitrides  Inversion Domains  High-temperature  Gan  Si(111)  Aln  Sapphire  
Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 235-238
Authors:  Ran JX (Ran Junxue);  Wang XL (Wang Xiaoliang);  Hu GX (Hu Guoxin);  Li JP (Li Jianping);  Wang BZ (Wang Baozhu);  Xiao HL (Xiao Hongling);  Wang JX (Wang Junxi);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zhanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Doping  
The influence of internal electric fields on the transition energy of InGaN/gaN quantum well 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 522-526
Authors:  Guo LC (Guo Lunchun);  Wang XL (Wang Xiaoliang);  Xiao HL (Xiao Hongling);  Wang BZ (Wang Baozhu);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
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Computer Simulation  
Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2007, 卷号: 298 Sp.Iss.SI, 期号: 0, 页码: 800-803
Authors:  Fang CB (Fang Cebao);  Wang XL (Wang Xiaoliang);  Xiao HL (Xiao Hongling);  Hu GX (Hu Guoxin);  Wang CM (Wang Cuimei);  Wang XY (Wang Xiaoyan);  Li JP (Li Jianping);  Wang JX (Wang Junxi);  Li CJ (Li Chengji);  Zeng YP (Zeng Yiping);  Li JM (Li Jinmin);  Wang ZG (Wang Zanguo);  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: xlwang@red.semi.ac.cn
Adobe PDF(167Kb)  |  Favorite  |  View/Download:1220/364  |  Submit date:2010/03/29
Deep Defect  
The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Authors:  Wang CM;  Wang XL;  Hu GX;  Wang JX;  Xiao HL;  Li JP;  Wang, XL, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China. E-mail: xlwang@red.semi.ac.cn
Adobe PDF(237Kb)  |  Favorite  |  View/Download:1240/367  |  Submit date:2010/04/11
2deg  Mocvd  Semiconducting Iii-v Materials  Hemt  Power Devices  Heterostructures  Passivation  Sapphire  Algan  Field  Gas  
The effect of the AlxGa1-xN/AIN buffer layer on the properties of GaN/Si(111) film grown by NH3-MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 280, 期号: 3-4, 页码: 346-351
Authors:  Zhang NH;  Wang XL;  Zeng YP;  Xiao HL;  Wang JX;  Liu HX;  Li JM;  Zhang, NH, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China. 电子邮箱地址: znhong@red.semi.ac.cn
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Photoluminescence  
Growth and characterization of InN on sapphire substrate by RF-MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2005, 卷号: 276, 期号: 3-4, 页码: 401-406
Authors:  Xiao, HL;  Wang, XL;  Wang, JX;  Zhang, NH;  Liu, HX;  Zeng, YP;  Li, JM;  Wang, ZG;  Xiao, HL, Chinese Acad Sci, Inst Semicond, Novel Mat Grp, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: hlxiao@red.semi.ac.cn
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Photoluminescence