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Optical and structural characteristics of high indium content InGaN/GaN multi-quantum wells with varying GaN cap layer thickness 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 页码: 055709
Authors:  J. Yang;  D. G. Zhao;  D. S. Jiang;  P. Chen;  J. J. Zhu;  Z. S. Liu;  L. C. Le;  X. J. Li;  X. G. He;  J. P. Liu;  H. Yang;  Y. T. Zhang;  G. T. Du
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Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  X.G. He;  X.J. Li;  H. Yang;  Y.T. Zhang;  G.T. Du
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高质量稀磁半导体(Ga, Mn)Sb单晶薄膜分子束外延生长 期刊论文
物理学报, 2015, 卷号: 64, 期号: 7, 页码: 077501
Authors:  祝梦遥;  鲁军;  马佳淋;  李利霞;  王海龙;  潘东;  赵建华
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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
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Temperature dependence of photoluminescence spectra for green ligh emission from InGaN/GaN multiple wells 期刊论文
OPTICS EXPRESS, 2015, 卷号: 23, 期号: 12, 页码: 15935
Authors:  W. Liu;  D. G. Zhao;  D. S. Jiang;  P. Chen;  Z. S. Liu;  J. J. Zhu;  M. Shi;  D. M.Zhao;  X. Li;  J. P. Liu;  S. M. Zhang;  H. Wang;  H. Yang;  Y. T. Zhang;  G. T.Du
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Differential resistance of GaN-based laser diodes with and without polarization effect 期刊论文
APPLIED OPTICS, 2015, 卷号: 54, 期号: 29, 页码: 8706-8711
Authors:  X. LI;  Z. S. LIU;  D. G. ZHAO;  D. S. JIANG;  P. CHEN;  J. J. ZHU;  J. YANG;  L. C. LE;  W. LIU;  X. G. HE;  X. J. LI;  F. LIANG;  L. Q. ZHANG;  J. Q. LIU;  H. YANG
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The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
Authors:  P. Chen;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  J. Yang;  X. Li;  L. Q. Zhang;  J.P. Liu;  S.M. Zhang;  H. Yang
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