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Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文
Vacuum, 2016, 卷号: 129, 页码: 99-104
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  X.G. He;  X.J. Li;  J.P. Liu;  L.Q. Zhang;  H. Yang
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Large field emission current from Si-doped AlN film grown by MOCVD on n-type (001) 6H-SiC 期刊论文
Chemical Physics Letters, 2016, 卷号: 651, 页码: 76-79
Authors:  F. Liang;  P. Chen;  D.G. Zhao;  D.S. Jiang;  Z.S. Liu;  J.J. Zhu;  J. Yang;  W. Liu;  X.G. He;  X.J. Li;  X. Li;  S.T. Liu;  H. Yang;  L.Q. Zhang;  J.P. Liu;  Y.T. Zhang;  G.T. Du
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Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文
Superlattices and Microstructures, 2016, 卷号: 97, 页码: 186-192
Authors:  X. Li;  D.G. Zhao;  J. Yang;  D.S. Jiang;  Z.S. Liu;  P. Chen;  J.J. Zhu;  W. Liu;  X.G. He;  X.J. Li;  F. Liang;  L.Q. Zhang;  J.P. Liu;  H. Yang;  Y.T. Zhang;  G.T. Du
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Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 681, 页码: 522-526
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  J.P. Liu;  L.Q. Zhang;  H. Yang;  Y.T. Zhang;  G.T. Du
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GaN high electron mobility transistors with AlInN back barriers 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 662, 页码: 16-19
Authors:  X.G. He;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  P. Chen;  Z.S. Liu;  L.C. Le;  J. Yang;  X.J. Li;  J.P. Liu;  L.Q. Zhang;  H. Yang
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Localization effect in green light emitting InGaN/GaN multiple quantum wells with varying well thickness 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 625, 页码: 266–270
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  M. Shi;  D.M. Zhao;  X. Li;  J.P. Liu;  S.M. Zhang;  H. Wang;  H. Yang
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The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
Authors:  P. Chen;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  J. Yang;  X. Li;  L. Q. Zhang;  J.P. Liu;  S.M. Zhang;  H. Yang
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The difference in efficiency droop behaviors of two InGaN/GaN multiple-quantum-well green light-emitting diodes with modified structural parameters 期刊论文
SUPERLATTICES AND MICROSTRUCTURES, 2015, 卷号: 88, 页码: 50-55
Authors:  W. Liu;  D.G. Zhao;  D.S. Jiang;  P. Chen;  Z.S. Liu;  J.J. Zhu;  X. Li;  F. Liang;  J.P. Liu;  S.M. Zhang;  H. Yang;  Y.T. Zhang;  G.T. Du
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Saturation of the junction voltage in GaN-based laser diodes 期刊论文
Applied Physics Letters, 2013, 卷号: 102, 期号: 18, 页码: 183509
Authors:  Feng, M.X.;  Liu, J.P.;  Zhang, S.M.;  Liu, Z.S.;  Jiang, D.S.;  Li, Z.C.;  Wang, F.;  Li, D.Y.;  Zhang, L.Q.;  Wang, H.;  Yang, H.
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在半导体衬底上制备有序砷化铟量子点的方法 专利
专利类型: 发明, 申请日期: 2008-08-13, 公开日期: 2009-06-04, 2009-06-11
Inventors:  周慧英;  曲胜春;  金鹏;  徐波;  王赤云;  刘俊朋;  王智杰;  王占国
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