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Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文
Vacuum, 2016, 卷号: 129, 页码: 99-104
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  X.G. He;  X.J. Li;  J.P. Liu;  L.Q. Zhang;  H. Yang
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GaN high electron mobility transistors with AlInN back barriers 期刊论文
Journal of Alloys and Compounds, 2016, 卷号: 662, 页码: 16-19
Authors:  X.G. He;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  P. Chen;  Z.S. Liu;  L.C. Le;  J. Yang;  X.J. Li;  J.P. Liu;  L.Q. Zhang;  H. Yang
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GaN基材料生长与发光器件基础问题研究 学位论文
, 北京: 中国科学院研究生院, 2015
Authors:  乐伶聪
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Photovoltaic response of InGaN/GaN multi-quantum well solar cells enhanced by inserting thin GaN cap layers 期刊论文
JOURNAL OF ALLOYS AND COMPOUNDS, 2015, 卷号: 635, 期号: 2015, 页码: 82–86
Authors:  J. Yang;  D.G. Zhao;  D.S. Jiang;  P. Chen;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  X.G. He;  X.J. Li;  H. Yang;  Y.T. Zhang;  G.T. Du
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The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN-based multiple quantum well laser diodes 期刊论文
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2015, 卷号: 212, 期号: 12, 页码: 2936–2943
Authors:  P. Chen;  D.G. Zhao;  D.S. Jiang;  J.J. Zhu;  Z.S. Liu;  L.C. Le;  J. Yang;  X. Li;  L. Q. Zhang;  J.P. Liu;  S.M. Zhang;  H. Yang
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一种高阻GaN薄膜的制备方法 专利
专利类型: 发明, 公开日期: 2014-02-12
Inventors:  何晓光;  赵德刚;  江德生;  刘宗顺;  陈平;  杨静;  乐伶聪;  李晓静;  杨辉
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InGaN太阳能电池及其制作方法 专利
专利类型: 发明, 公开日期: 2012-12-19
Inventors:  李亮;  赵德刚;  江德生;  刘宗顺;  陈平;  吴亮亮;  乐伶聪;  杨辉
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改进p-GaN薄膜欧姆接触的材料结构及其制备方法 专利
专利类型: 发明, 公开日期: 2013-05-01
Inventors:  吴亮亮;  赵德刚;  江德生;  刘宗顺;  陈平;  李亮;  乐伶聪;  杨辉
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高电阻低位错GaN薄膜及制备方法 专利
专利类型: 发明, 公开日期: 2014-06-25
Inventors:  何晓光;  赵德刚;  江德生;  刘宗顺;  陈平;  杨静;  乐伶聪;  李晓静;  杨辉
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减小GaN基蓝紫光端发射激光器电子泄漏的方法 专利
专利类型: 发明, 公开日期: 2013-07-30
Inventors:  乐伶聪;  赵德刚;  江德生;  刘宗顺;  陈平;  杨静;  何晓光;  李晓静;  杨辉
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