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Landau levels and magneto-transport property of monolayer phosphorene 期刊论文
Scientific Reports, 2015, 卷号: 5, 页码: 12295
Authors:  X. Y. Zhou;  R. Zhang;  J. P. Sun;  Y. L. Zou;  D. Zhang;  W. K. Lou;  F. Cheng;  G. H. Zhou;  F. Zhai;  Kai Chang
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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
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High efficient GaN-based laser diodes with tunnel junction 期刊论文
Applied Physics Letters, 2013, 卷号: 103, 期号: 4, 页码: 043508
Authors:  M. X. Feng, J. P. Liu, S. M. Zhang, D. S. Jiang, Z. C. Li, K. Zhou, D. Y. Li, L. Q. Zhang, F. Wang, H. Wang, P. Chen, Z. S. Liu, D. G. Zhao, Q. Sun, H. Yang
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Effects of matrix layer composition on the structural and optical properties of self-organized InGaN quantum dots 期刊论文
Journal of Applied Physics, 2013, 卷号: 114, 期号: 9, 页码: 093105
Authors:  Z. C. Li, J. P. Liu, M. X. Feng, K. Zhou, S. M. Zhang, H. Wang, D. Y. Li, L. Q. Zhang, Q. Sun, D. S. Jiang, H. B.Wang, and H. Yang
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The two- to three-dimensional growth transition of InAs/GaAs epitaxy layer studied by reflectance difference spectroscopy 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 8, 页码: Art. No. 083513
Authors:  Zhou GY (Zhou G. Y.);  Chen YH (Chen Y. H.);  Tang CG (Tang C. G.);  Liang LY (Liang L. Y.);  Jin P (Jin P.);  Wang ZG (Wang Z. G.);  Zhou, GY, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址: yhchen@red.semi.ac.cn
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Quantum-dot System  Island Formation  In-situ  Evolution  Gaas  Photoluminescence  
Anomalous shift of the beating nodes in illumination-controlled In1-xGaxAs/In1-yAlyAs two-dimensional electron gases with strong spin-orbit interaction 期刊论文
PHYSICAL REVIEW B, 2010, 卷号: 81, 期号: 19, 页码: Art. No. 195312
Authors:  Zhou WZ (Zhou W. Z.);  Lin T (Lin T.);  Shang LY (Shang L. Y.);  Yu G (Yu G.);  Gao KH (Gao K. H.);  Zhou YM (Zhou Y. M.);  Wei LM (Wei L. M.);  Cui LJ (Cui L. J.);  Zeng YP (Zeng Y. P.);  Guo SL (Guo S. L.);  Chu JH (Chu J. H.);  Zhou, WZ, E China Normal Univ, Minist Educ, Key Lab Polar Mat & Devices, Shanghai 200062, Peoples R China. 电子邮箱地址: zhouwz@mail.sitp.ac.cn;  jhchu@mail.sitp.ac.cn
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Inxga1-xas/inp Quantum-wells  Inversion Asymmetry  Hole Systems  Heterostructures  Subband  Layers  
Weak antilocalization and beating pattern in an InGaAs/InAlAs quantum well 期刊论文
SOLID STATE COMMUNICATIONS, 2007, 卷号: 143, 期号: 6-7, 页码: 300-303
Authors:  Zhou, WZ (Zhou, W. Z.);  Lin, T (Lin, T.);  Shang, LY (Shang, L. Y.);  Yu, G (Yu, G.);  Huang, ZM (Huang, Z. M.);  Guo, SL (Guo, S. L.);  Gui, YS (Gui, Y. S.);  Dai, N (Dai, N.);  Chu, JH (Chu, J. H.);  Cui, LJ (Cui, L. J.);  Li, DL (Li, D. L.);  Gao, HL (Gao, H. L.);  Zeng, YP (Zeng, Y. P.);  Chu, JH, Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China. 电子邮箱地址: jhchu@mail.sitp.ac.cn
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Quantum Well  
适用于光发射机设计的实用VCSEL小信号等效电路模型 期刊论文
兰州大学学报. 自然科学版, 2004, 卷号: 20, 期号: 2, 页码: 39-42
Authors:  崔增文;  韩建忠;  何山虎;  陈弘达;  孙增辉;  高鹏;  周毅
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