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The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices 期刊论文
SOLID-STATE ELECTRONICS, 2001, 卷号: 45, 期号: 5, 页码: 751-754
Authors:  Cao X;  Zeng YP;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(141Kb)  |  Favorite  |  View/Download:1118/511  |  Submit date:2010/08/12
Molecular Beam Epitaxy  Pseudomorphic Hemts  Photoluminescence  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  Favorite  |  View/Download:891/345  |  Submit date:2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download:963/394  |  Submit date:2010/11/15
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(106Kb)  |  Favorite  |  View/Download:1184/426  |  Submit date:2010/11/15
Molecular Beam Epitaxy  Mobility  
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 4, 页码: 520-524
Authors:  Cao X;  Zeng YP;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Wang XG;  Chang Y;  Chu JH;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(102Kb)  |  Favorite  |  View/Download:1398/521  |  Submit date:2010/08/12
Molecular Beam Epitaxy  Semiconducting Iii-v Materials  High Electron Mobility Transistors  Electron-mobility Transistor  Carrier Density  Quantum-wells  Band-gap  
Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 4, 页码: 489-493
Authors:  Gao F;  Huang DD;  Li JP;  Kong MY;  Sun DZ;  Li JM;  Zeng YP;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(109Kb)  |  Favorite  |  View/Download:1060/317  |  Submit date:2010/08/12
Molecular Beam Epitaxy  Semiconducting Gegermanium  Semiconducting Silicon  Bipolar Transistors  Heterojunction Semiconductor Devices  Power  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Authors:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(187Kb)  |  Favorite  |  View/Download:890/264  |  Submit date:2010/08/12
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
High-quality metamorphic HEMT grown on GaAs substrates by MBE 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 210-213
Authors:  Zeng YP;  Cao X;  Cui LJ;  Kong MY;  Pan L;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(148Kb)  |  Favorite  |  View/Download:858/235  |  Submit date:2010/08/12
Molecular Beam Epitaxy  High Electron Mobility Transistors  Density  
Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 127-131
Authors:  Cao X;  Zeng YP;  Cui LJ;  Kong MY;  Pan LA;  Wang BQ;  Zhu ZP;  Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(106Kb)  |  Favorite  |  View/Download:1052/343  |  Submit date:2010/08/12
Molecular Beam Epitaxy  Mobility  
Changing the size and shape of Ge island by chemical etching 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 231, 期号: 1-2, 页码: 17-21
Authors:  Gao F;  Huang CJ;  Huang DD;  Li JP;  Sun DZ;  Kong MY;  Zeng YP;  Li JM;  Lin LY;  Gao F,Chinese Acad Sci,Inst Semicond,Ctr Mat Sci,POB 912,Beijing 100083,Peoples R China.
Adobe PDF(156Kb)  |  Favorite  |  View/Download:1255/305  |  Submit date:2010/08/12
Atomic Force Microscopy  Etching  Nanostructures  Molecular Beam Epitaxy  Semiconducting Germanium  Semiconducting Silicon  Quantum Dots  Inas  Growth  Strain