SEMI OpenIR  > 中国科学院半导体研究所(2009年前)
Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer
Cao X; Zeng YP; Kong MY; Pan LA; Wang BQ; Zhu ZP; Wang XG; Chang Y; Chu JH; Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
2001
Source PublicationJOURNAL OF CRYSTAL GROWTH
ISSN0022-0248
Volume231Issue:4Pages:520-524
AbstractThe photoluminescence spectra of the single delta -doped AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer were studied. There are two peaks in the PL spectra of the structure corresponding to two sub-energy levels of the InGaAs quantum well. It was found that the photoluminescence intensity ratio of the two peaks changes with the spacer thickness of the pseudomorphic HEMTs. The reasons were discussed. The possible use of this phenomenon in optimization of pseudomorphic HEMTs was also proposed. (C) 2001 Elsevier Science B.V. All rights reserved.
metadata_83chinese acad sci, inst semicond, beijing 100083, peoples r china; chinese acad sci, shanghai inst tech phys, natl lab infrared phys, shanghai 200083, peoples r china
KeywordMolecular Beam Epitaxy Semiconducting Iii-v Materials High Electron Mobility Transistors Electron-mobility Transistor Carrier Density Quantum-wells Band-gap
Subject Area半导体材料
Indexed BySCI
Language英语
Date Available2010-08-12
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/12098
Collection中国科学院半导体研究所(2009年前)
Corresponding AuthorCao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China.
Recommended Citation
GB/T 7714
Cao X,Zeng YP,Kong MY,et al. Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer[J]. JOURNAL OF CRYSTAL GROWTH,2001,231(4):520-524.
APA Cao X.,Zeng YP.,Kong MY.,Pan LA.,Wang BQ.,...&Cao X,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China..(2001).Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer.JOURNAL OF CRYSTAL GROWTH,231(4),520-524.
MLA Cao X,et al."Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with different thickness of spacer layer".JOURNAL OF CRYSTAL GROWTH 231.4(2001):520-524.
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