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Coupling and single-photon purity of a quantum dot-cavity system studied using hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2015, 卷号: 117, 期号: 1, 页码: 014304
Authors:  P. Y. Zhou;  X. F. Wu;  K. Ding;  X. M. Dou;  G. W. Zha;  H. Q. Ni;  Z. C. Niu;  H. J. Zhu;  D. S. Jiang;  C. L. Zhao;  B. Q. Sun
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Single-photon property characterization of 1.3 mu m emissions from InAs/GaAs quantum dots using silicon avalanche photodiodes 期刊论文
SCIENTIFIC REPORTS, 2014, 卷号: 4, 页码: 3633
Authors:  Zhou, PY;  Dou, XM;  Wu, XF;  Ding, K;  Li, MF;  Ni, HQ;  Niu, ZC;  Jiang, DS;  Sun, BQ
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In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots 期刊论文
EPL, 2014, 卷号: 107, 期号: 2, 页码: 27008
Authors:  Wu, XF;  Wei, H;  Dou, XM;  He, LX;  Sun, BQ;  Ding, K;  Yu, Y;  Ni, HQ;  Niu, ZC;  Ji, Y;  Li, SS;  Jiang, DS;  Guo, GC
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Photoluminescence studies on self-organized 1.55-mu m InAs/InGaAsP/InP quantum dots under hydrostatic pressure 期刊论文
JOURNAL OF APPLIED PHYSICS, 2014, 卷号: 116, 期号: 2, 页码: 023510
Authors:  Zhou, PY;  Dou, XM;  Wu, XF;  Ding, K;  Luo, S;  Yang, T;  Zhu, HJ;  Jiang, DS;  Sun, BQ
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Specific Detection of Alpha-Fetoprotein Using AlGaAs/GaAs High Electron Mobility Transistors 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2014, 卷号: 35, 期号: 3, 页码: 333-335
Authors:  Ding, K;  Wang, CY;  Zhang, BT;  Zhang, Y;  Guan, M;  Cui, LJ;  Zhang, YW;  Zeng, YP;  Lin, Z;  Huang, F
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Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots 期刊论文
PHYSICAL REVIEW B, 2011, 卷号: 83, 期号: 12, 页码: Article no.121302
Authors:  Plumhof JD;  Krapek V;  Ding F;  Jons KD;  Hafenbrak R;  Klenovsky P;  Herklotz A;  Dorr K;  Michler P;  Rastelli A;  Schmidt OG;  Plumhof, JD, IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden,;
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Entangled Photon Pairs  Semiconductor  Spin  
Theoretical study of polarization-doped GaN-based light-emitting diodes 期刊论文
Applied Physics Letters, 2011, 卷号: 98, 期号: 10, 页码: 101110
Authors:  Zhang, L.;  Ding, K.;  Liu, N.X.;  Wei, T.B.;  Ji, X.L.;  Ma, P.;  Yan, J.C.;  Wang, J.X.;  Zeng, Y.P.;  Li, J.M.;  Zhang, L.(
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Electron Injection  Gallium Alloys  Gallium Nitride  Light  Light Emission  Organic Light Emitting Diodes(Oled)  Polarization  
Tuning the Exciton Binding Energies in Single Self-Assembled InGaAs/GaAs Quantum Dots by Piezoelectric-Induced Biaxial Stress 期刊论文
PHYSICAL REVIEW LETTERS, 2010, 卷号: 104, 期号: 6, 页码: Art. No. 067405
Authors:  Ding F;  Singh R;  Plumhof JD;  Zander T;  Krapek V;  Chen YH;  Benyoucef M;  Zwiller V;  Dorr K;  Bester G;  Rastelli A;  Schmidt OG;  Ding, F, IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden, Germany. E-mail Address:;;
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Stretchable Graphene: A Close Look at Fundamental Parameters through Biaxial Straining 期刊论文
NANO LETTERS, 2010, 卷号: 10, 期号: 9, 页码: 3453-3458
Authors:  Ding F (Ding Fei);  Ji HX (Ji Hengxing);  Chen YH (Chen Yonghai);  Herklotz A (Herklotz Andreas);  Dorr K (Doerr Kathrin);  Mei YF (Mei Yongfeng);  Rastelli A (Rastelli Armando);  Schmidt OG (Schmidt Oliver G.)
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Graphene  Strain Engineering  Gruneisen Parameters  Raman Spectroscopy  Piezoelectric Actuator  
Magnetoresistance in a nominally undoped InGaN thin film 期刊论文
Authors:  Ding K;  Zeng YP;  Li YY;  Cui LJ;  Wang JX;  Lu HX;  Cong PP;  Ding, K, Chinese Acad Sci, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China. 电子邮箱地址:
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Negative Magnetoresistance  Diodes