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Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots 期刊论文
PHYSICAL REVIEW B, 2011, 卷号: 83, 期号: 12, 页码: Article no.121302
Authors:  Plumhof JD;  Krapek V;  Ding F;  Jons KD;  Hafenbrak R;  Klenovsky P;  Herklotz A;  Dorr K;  Michler P;  Rastelli A;  Schmidt OG;  Plumhof, JD, IFW Dresden, Inst Integrat Nanosci, Helmholtzstr 20, D-01069 Dresden, Germanyj.d.plumhof@ifw-dresden.de;  a.rastelli@ifw-dresden.de
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Entangled Photon Pairs  Semiconductor  Spin