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In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots
Wu, XF; Wei, H; Dou, XM; He, LX; Sun, BQ; Ding, K; Yu, Y; Ni, HQ; Niu, ZC; Ji, Y; Li, SS; Jiang, DS; Guo, GC
2014
Source PublicationEPL
Volume107Issue:2Pages:27008
Subject Area半导体物理
Indexed BySCI
Language英语
Date Available2015-03-25
Document Type期刊论文
Identifierhttp://ir.semi.ac.cn/handle/172111/26257
Collection半导体超晶格国家重点实验室
Recommended Citation
GB/T 7714
Wu, XF,Wei, H,Dou, XM,et al. In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots[J]. EPL,2014,107(2):27008.
APA Wu, XF.,Wei, H.,Dou, XM.,He, LX.,Sun, BQ.,...&Guo, GC.(2014).In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots.EPL,107(2),27008.
MLA Wu, XF,et al."In situ tuning biexciton antibinding-binding transition and fine-structure splitting through hydrostatic pressure in single InGaAs quantum dots".EPL 107.2(2014):27008.
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