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无权访问的条目 期刊论文
作者:  Hao XP;  Cui DL;  Shi GX;  Yin YQ;  Xu XG;  Wang JY;  Jiang MH;  Xu XW;  Li YP;  Sun BQ;  Cui DL,Shandong Univ,State Key Lab Crystal Mat,Jinan 250100,Peoples R China.
Adobe PDF(75Kb)  |  收藏  |  浏览/下载：1288/440  |  提交时间：2010/08/12
High-quality GaN grown by gas-source MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Wang JX;  Sun DZ;  Wang XL;  Li JM;  Zeng YP;  Hou X;  Lin LY;  Wang JX Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(103Kb)  |  收藏  |  浏览/下载：1725/464  |  提交时间：2010/11/15
Characterization  Molecular Beam Epitaxy  Gallium Compounds  Nitrides  Piezoelectric Materials  Semiconducting Gallium Compounds  Molecular-beam Epitaxy  Heterostructures  Sapphire  Diodes  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：1216/219  |  提交时间：2010/11/15
Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(109Kb)  |  收藏  |  浏览/下载：1414/268  |  提交时间：2010/11/15
Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Zheng LX;  Xie MH;  Xu SJ;  Cheung SH;  Tong SY;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(193Kb)  |  收藏  |  浏览/下载：1172/243  |  提交时间：2010/11/15
Surface Processes  Molecular Beam Epitaxy  Nitrides  Semiconducting Gallium Compounds  Gan(0001) Surfaces  Reconstructions  
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Kong MY;  Zhang JP;  Wang XL;  Sun DZ;  Kong MY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(187Kb)  |  收藏  |  浏览/下载：1278/345  |  提交时间：2010/11/15
Impurities  Molecular Beam Epitaxy  Nitrides  Semiconducting Iii-v Materials  Gallium Nitride  Sapphire Substrate  Defects  Heterostructure  Semiconductors  Stress  
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
作者:  Qu B;  Zheng XH;  Wang YT;  Xu DP;  Lin SM;  Yang H;  Liang JW;  Qu B Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelectron POB 912 Beijing 100083 Peoples R China.
Adobe PDF(191Kb)  |  收藏  |  浏览/下载：1639/385  |  提交时间：2010/11/15
X-ray Diffraction  Nitrides  Semiconducting Iii-v Materials  Phase  Films  
Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Xu SJ;  Or CT;  Li Q;  Zheng LX;  Xie MH;  Tong SY;  Yang H;  Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
Adobe PDF(89Kb)  |  收藏  |  浏览/下载：1237/331  |  提交时间：2010/11/15
Optical-transitions  Photoluminescence  
Influences of initial nitridation process on the optical and structural characterization of GaN layer grown on sapphire (0001) by metalorganic chemical vapor deposition 会议论文
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2), DENVER, COLORADO, JUL 16-20, 2001
作者:  Sun XL;  Yang H;  Zhu JJ;  Wang YT;  Chen Y;  Li GH;  Wang ZG;  Sun XL Ohio State Univ Dept Elect Engn Columbus OH 43210 USA.
Adobe PDF(110Kb)  |  收藏  |  浏览/下载：1270/285  |  提交时间：2010/11/15
Gallium Nitride  Luminescence  Bulk  
无权访问的条目 期刊论文
作者:  Wan SP;  Xia JB;  Chang K;  Wan SP,Chinese Acad Sci,Inst Semicond,Natl Lab Superlattices & Microstruct,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: wanshoupu@hotmail.com
Adobe PDF(114Kb)  |  收藏  |  浏览/下载：1116/465  |  提交时间：2010/08/12