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Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 会议论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 16 (1-2), SINGAPORE, SINGAPORE, JUL 01-06, 2001
Authors:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
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Molecular-beam Epitaxy  
Comparative study on the broadening of exciton luminescence linewidth due to phonon in zinc-blende and wurtzite GaN epilayers 期刊论文
APPLIED PHYSICS LETTERS, 2002, 卷号: 81, 期号: 23, 页码: 4389-4391
Authors:  Xu SJ;  Zheng LX;  Cheung SH;  Xie MH;  Tong SY;  Yang H;  Xu SJ,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Molecular-beam Epitaxy  Vapor-phase Epitaxy  Cubic Gan  Binding-energy  Photoluminescence  Pressure  Electron  Gaas  Aln  
Growth and structural properties of GaN films on flat and vicinal SiC(0001) substrates 期刊论文
INTERNATIONAL JOURNAL OF MODERN PHYSICS B, 2002, 卷号: 16, 期号: 1-2, 页码: 165-172
Authors:  Xie MH;  Cheung SH;  Zheng LX;  Tong SY;  Zhang BS;  Yang H;  Xie MH,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Molecular-beam Epitaxy  
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Zheng LX;  Xie MH;  Xu SJ;  Cheung SH;  Tong SY;  Xie MH Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
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Surface Processes  Molecular Beam Epitaxy  Nitrides  Semiconducting Gallium Compounds  Gan(0001) Surfaces  Reconstructions  
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 376-380
Authors:  Zheng LX;  Xie MH;  Xu SJ;  Cheung SH;  Tong SY;  Xie MH,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Surface Processes  Molecular Beam Epitaxy  Nitrides  Semiconducting Gallium Compounds  Gan(0001) Surfaces  Reconstructions  
Observation of "ghost" islands and surfactant effect of surface gallium atoms during GaN growth by molecular beam epitaxy 期刊论文
PHYSICAL REVIEW LETTERS, 2000, 卷号: 85, 期号: 11, 页码: 2352-2355
Authors:  Zheng LX;  Xie MH;  Seutter SM;  Cheung SH;  Tong SY;  Zheng LX,Univ Hong Kong,Dept Phys,Pokfulam Rd,Hong Kong,Hong Kong,Peoples R China.
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Gan(0001)  Films