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中国科学院半导体研究所机构知识库
Knowledge Management System Of Institute of Semiconductors,CAS
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Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates
期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 98, 页码: 55430-55434
Authors:
Zheng, CC
;
Ning, JQ
;
Wu, ZP
;
Wang, JF
;
Zhao, DG
;
Xu, K
;
Gao, J
;
Xu, SJ
Adobe PDF(652Kb)
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View/Download:421/99
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Submit date:2015/03/20
Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique
期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 9, 页码: 091001
Authors:
Lu LW (Lu, Liwu)
;
Su SC (Su, Shichen)
;
Ling CC (Ling, Chi-Chung)
;
Xu SJ (Xu, Shijie)
;
Zhao DG (Zhao, Degang)
;
Zhu JJ (Zhu, Jianjun)
;
Yang H (Yang, Hui)
;
Wang JN (Wang, Jiannong)
;
Gey WK (Gey, Weikun)
Adobe PDF(449Kb)
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View/Download:1050/290
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Submit date:2013/04/02
Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration?
期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 19, 页码: 191102
Authors:
Zheng CC (Zheng, C. C.)
;
Xu SJ (Xu, S. J.)
;
Zhang F (Zhang, F.)
;
Ning JQ (Ning, J. Q.)
;
Zhao DG (Zhao, D. G.)
;
Yang H (Yang, H.)
;
Che CM (Che, C. M.)
Adobe PDF(633Kb)
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View/Download:814/269
  |  
Submit date:2013/03/27
Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes
期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 3, 页码: 35008
Authors:
Zheng, CC
;
Xu, SJ
;
Ning, JQ
;
Bao, W
;
Wang, JF
;
Gao, J
;
Liu, JM
;
Zhu, JH
;
Liu, XL
Adobe PDF(562Kb)
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View/Download:792/262
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Submit date:2013/03/17
Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation
期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:
Ning JQ
;
Xu SJ
;
Ruan XZ
;
Ji Y
;
Zheng HZ
;
Sheng WD
;
Liu HC
;
Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
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View/Download:831/116
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Submit date:2012/01/06
Wells
Relaxation
Hole
Photoluminescence
Semiconductors
Localization
Transitions
Excitons
Carriers
Growth
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging
期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 11, 页码: 113115
Authors:
Zhu JH
;
Ning JQ
;
Zheng CC
;
Xu SJ
;
Zhang SM
;
Yang H
;
Zhu, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China, sjxu@hkucc.hku.hk
;
hyang2006@sinano.ac.cn
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View/Download:1093/389
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Submit date:2012/02/06
Light-emitting-diodes
Laser-diodes
Gan
Nanowires
硬限幅多阈值神经元在组合逻辑设计中的应用
期刊论文
电路与系统学报, 2011, 卷号: 16, 期号: 1, 页码: 121-124,120
Authors:
陈旭
;
李卫军
;
王守觉
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View/Download:1275/295
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Submit date:2011/08/16
Implantable CMOS neuro-stimulus chip for visual prosthesis
期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2011, 卷号: 54, 期号: 4, 页码: 898-908
Authors:
Zhang X
;
Pei WH
;
Huang BJ
;
Wang SJ
;
Guan N
;
Guo K
;
Wang Y
;
Gui Q
;
Chen J
;
Wang K
;
Wu HJ
;
Li XX
;
Li K
;
Chen HD
;
Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. zhangxu@semi.ac.cn
Adobe PDF(784Kb)
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View/Download:1503/559
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Submit date:2011/07/05
Biomedical Microelectronics
Visual Prosthesis
Functional Electrical Stimulation
Acute Animal Experiment
Electrical Evoked Potential (Eep) Test
Retinal Prosthesis
Stimulation
Device
Blind
Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks
期刊论文
PHYSICS LETTERS A, 2010, 卷号: 374, 期号: 47, 页码: 4793-4796
Authors:
Ning JQ (Ning J. Q.)
;
Xu SJ (Xu S. J.)
;
Wei ZF (Wei Z. F.)
;
Ruan XZ (Ruan X. Z.)
;
Ji Y (Ji Yang)
;
Zheng HZ (Zheng H. Z.)
;
Liu HC (Liu H. C.)
;
Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: sjxu@hkucc.hku.hk
Adobe PDF(305Kb)
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View/Download:1539/536
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Submit date:2010/12/05
Optical Kerr Effect
Electron Spin
Quantum Disks
Inas/gaas
Refractive-index
Coherence
Gaas
Semiconductors
Optical properties of light-hole excitons in GaN epilayers
期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 11, 页码: Article no.116103
Authors:
Zhang F
;
Xu SJ
;
Ning JQ
;
Zheng CC
;
Zhao DG
;
Yang H
;
Che CM
;
Zhang, F, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. sjxu@hkucc.hku.hk
Adobe PDF(369Kb)
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View/Download:946/323
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Submit date:2011/07/05
Transitions
Absorption