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Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates 期刊论文
RSC ADVANCES, 2014, 卷号: 4, 期号: 98, 页码: 55430-55434
Authors:  Zheng, CC;  Ning, JQ;  Wu, ZP;  Wang, JF;  Zhao, DG;  Xu, K;  Gao, J;  Xu, SJ
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Conduction Band Offset of InGaN/AlInGaN Quantum Wells Studied by Deep Level Transient Spectroscopic Technique 期刊论文
APPLIED PHYSICS EXPRESS, 2012, 卷号: 5, 期号: 9, 页码: 091001
Authors:  Lu LW (Lu, Liwu);  Su SC (Su, Shichen);  Ling CC (Ling, Chi-Chung);  Xu SJ (Xu, Shijie);  Zhao DG (Zhao, Degang);  Zhu JJ (Zhu, Jianjun);  Yang H (Yang, Hui);  Wang JN (Wang, Jiannong);  Gey WK (Gey, Weikun)
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Can interference patterns in the reflectance spectra of GaN epilayers give important information of carrier concentration? 期刊论文
APPLIED PHYSICS LETTERS, 2012, 卷号: 101, 期号: 19, 页码: 191102
Authors:  Zheng CC (Zheng, C. C.);  Xu SJ (Xu, S. J.);  Zhang F (Zhang, F.);  Ning JQ (Ning, J. Q.);  Zhao DG (Zhao, D. G.);  Yang H (Yang, H.);  Che CM (Che, C. M.)
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Residual strains and optical properties of ZnO thin epilayers grown on r-sapphire planes 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2012, 卷号: 27, 期号: 3, 页码: 35008
Authors:  Zheng, CC;  Xu, SJ;  Ning, JQ;  Bao, W;  Wang, JF;  Gao, J;  Liu, JM;  Zhu, JH;  Liu, XL
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Electronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation 期刊论文
JOURNAL OF APPLIED PHYSICS, 2011, 卷号: 110, 期号: 5, 页码: 54320
Authors:  Ning JQ;  Xu SJ;  Ruan XZ;  Ji Y;  Zheng HZ;  Sheng WD;  Liu HC;  Ning, JQ (reprint author), Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China, sjxu@hkucc.hku.hk
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Wells  Relaxation  Hole  Photoluminescence  Semiconductors  Localization  Transitions  Excitons  Carriers  Growth  
Implantable CMOS neuro-stimulus chip for visual prosthesis 期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2011, 卷号: 54, 期号: 4, 页码: 898-908
Authors:  Zhang X;  Pei WH;  Huang BJ;  Wang SJ;  Guan N;  Guo K;  Wang Y;  Gui Q;  Chen J;  Wang K;  Wu HJ;  Li XX;  Li K;  Chen HD;  Zhang, X, Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China. zhangxu@semi.ac.cn
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Biomedical Microelectronics  Visual Prosthesis  Functional Electrical Stimulation  Acute Animal Experiment  Electrical Evoked Potential (Eep) Test  Retinal Prosthesis  Stimulation  Device  Blind  
Localized surface optical phonon mode in the InGaN/GaN multiple-quantum-wells nanopillars: Raman spectrum and imaging 期刊论文
APPLIED PHYSICS LETTERS, 2011, 卷号: 99, 期号: 11, 页码: 113115
Authors:  Zhu JH;  Ning JQ;  Zheng CC;  Xu SJ;  Zhang SM;  Yang H;  Zhu, JH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, POB 912, Beijing 100083, Peoples R China, sjxu@hkucc.hku.hk;  hyang2006@sinano.ac.cn
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Light-emitting-diodes  Laser-diodes  Gan  Nanowires  
硬限幅多阈值神经元在组合逻辑设计中的应用 期刊论文
电路与系统学报, 2011, 卷号: 16, 期号: 1, 页码: 121-124，120
Authors:  陈旭;  李卫军;  王守觉
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Ultrafast Kerr rotations and zero-field dephasing time of electron spins in InAs/GaAs quantum disks 期刊论文
PHYSICS LETTERS A, 2010, 卷号: 374, 期号: 47, 页码: 4793-4796
Authors:  Ning JQ (Ning J. Q.);  Xu SJ (Xu S. J.);  Wei ZF (Wei Z. F.);  Ruan XZ (Ruan X. Z.);  Ji Y (Ji Yang);  Zheng HZ (Zheng H. Z.);  Liu HC (Liu H. C.);  Xu, SJ, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. 电子邮箱地址: sjxu@hkucc.hku.hk
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Optical Kerr Effect  Electron Spin  Quantum Disks  Inas/gaas  Refractive-index  Coherence  Gaas  Semiconductors  
Optical properties of light-hole excitons in GaN epilayers 期刊论文
JOURNAL OF APPLIED PHYSICS, 2010, 卷号: 108, 期号: 11, 页码: Article no.116103
Authors:  Zhang F;  Xu SJ;  Ning JQ;  Zheng CC;  Zhao DG;  Yang H;  Che CM;  Zhang, F, Univ Hong Kong, Dept Phys, Pokfulam Rd, Hong Kong, Hong Kong, Peoples R China. sjxu@hkucc.hku.hk
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Transitions  Absorption