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Selective intermixing of Ga(In)NAs/GaAs quantum well structures usingSiO(2) encapsulation and rapid thermal annealing 会议论文
APOC 2001: ASIA-PACIFIC OPTICAL AND WIRELESS COMMUNICATIONS: OPTOELECTRONICS, MATERIALS, AND DEVICES FOR COMMUNICATIONS, 4580, BEIJING, PEOPLES R CHINA, NOV 12-15, 2001
Authors:  Xu YQ;  Li LH;  Pan Z;  Lin YW;  Wang QM;  Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Molecular-beam Epitaxy  Mu-m  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文
JOURNAL OF CRYSTAL GROWTH, 227, BEIJING, PEOPLES R CHINA, SEP 11-15, 2000
Authors:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Effects of rapid thermal annealing and SiO2 encapsulation on GaNAs/GaAs single quantum wells grown by plasma-assisted molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 17, 页码: 2488-2490
Authors:  Li LH;  Pan Z;  Xu YQ;  Du Y;  Lin YW;  Wu RH;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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1.3 Mu-m  Optical-properties  Band-gap  Superlattices  Lasers  Gaas  
Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 527-531
Authors:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Characterization  Defects  X-ray Diffraction  Molecular Beam Epitaxy  Nitrides  Gaas  
Growth and characterization of GaInNAs/GaAs by plasma-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 227, 期号: 0, 页码: 516-520
Authors:  Pan Z;  Li LH;  Zhang W;  Wang XU;  Lin YW;  Wu RH;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Adsorption  Characterization  Radiation  Molecular Beam Epitaxy  Nitrides  Surface-emitting Laser  Quantum-wells  Operation  Range  
Effect of ion-induced damage on GaNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 期刊论文
JOURNAL OF CRYSTAL GROWTH, 2001, 卷号: 223, 期号: 1-2, 页码: 140-144
Authors:  Li LH;  Pan Z;  Zhang W;  Lin YW;  Wang XY;  Wu RH;  Ge WK;  Li LH,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Molecular Beam Epitaxy  Quantum Wells  Band-gap Energy  Photoluminescence  Temperature  Ganxas1-x  Films  
Conduction band offset and electron effective mass in GaInNAs/GaAs quantum-well structures with low nitrogen concentration 期刊论文
APPLIED PHYSICS LETTERS, 2001, 卷号: 78, 期号: 15, 页码: 2217-2219
Authors:  Pan Z;  Li LH;  Lin YW;  Sun BQ;  Jiang DS;  Ge WK;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Molecular-beam Epitaxy  Ingaasn  Laser  Operation  Alloys  Growth  Gaas  
GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy 会议论文
COMMAD 2000 PROCEEDINGS, BUNDOORA, AUSTRALIA, DEC 06-08, 2000
Authors:  Pan Z;  Li LH;  Wang XY;  Lin YW;  Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
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Operation  会议主办方: La Trobe Univ  Depts Electr Engn & Phys  
Effect of rapid thermal annealing on GaInNAs/GaAs quantum wells grown by plasma-assisted molecular-beam epitaxy 期刊论文
APPLIED PHYSICS LETTERS, 2000, 卷号: 77, 期号: 9, 页码: 1280-1282
Authors:  Pan Z;  Li LH;  Zhang W;  Lin YW;  Wu RH;  Ge W;  Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China.
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Chemical-vapor-deposition  Laser  Operation  Gaas