Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy

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	Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy
	Xu SJ; Or CT; Li Q; Zheng LX; Xie MH; Tong SY; Yang H; Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
	2001
会议名称	4th International Conference on Nitride Semiconductors (ICNS-4)
会议录名称	PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 188 (2)
页码	681-685
会议日期	JUL 16-20, 2001
会议地点	DENVER, COLORADO
出版地	PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY
出版者	WILEY-V C H VERLAG GMBH
ISSN	0031-8965
部门归属	univ hong kong, dept phys, hong kong, hong kong, peoples r china; univ hong kong, hku cas joint lab new mat, hong kong, hong kong, peoples r china; chinese acad sci, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	Defect states in cubic GaN epilayers grown on GaAs were investigated with the photoluminescence technique. One shallow donor and two acceptors were identified to be involved in relevant optical transitions. The binding energies of the free excitons, the bound excitons. the donor and the acceptors were determined. These values are in good agreement with recent theoretical results.
关键词	Optical-transitions Photoluminescence
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/14911
专题	中国科学院半导体研究所（2009年前）
通讯作者	Xu SJ Univ Hong Kong Dept Phys Pokfulam Rd Hong Kong Hong Kong Peoples R China.
推荐引用方式 GB/T 7714	Xu SJ,Or CT,Li Q,et al. Defect states in cubic GaN epilayer grown on GaAs by metalorganic vapor phase epitaxy[C]. PO BOX 10 11 61, D-69451 WEINHEIM, GERMANY:WILEY-V C H VERLAG GMBH,2001:681-685.

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