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The growth and characterization of GaN grown on a gamma-Al2O3/(001) Si substrate by metalorganic vapor phase epitaxy 会议论文
BLUE LASER AND LIGHT EMITTING DIODES II, CHIBA, JAPAN, SEP 29-OCT 02, 1998
作者:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang LS Chinese Acad Sci Inst Semicond Lab Semicond Mat Sci POB 912 Beijing 100083 Peoples R China.
收藏  |  浏览/下载：919/0  |  提交时间：2010/10/29
Sapphire  
High performance 1.55 mu m InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Ma XY;  Cao Q;  Wang ST;  Guo L;  Wang ZM;  Wang LM;  He GP;  Yang YL;  Zhang HQ;  Zhou XN;  Chen LH;  Ma XY Chinese Acad Sci Inst Semicond POB 912 Beijing 100083 Peoples R China.
Adobe PDF(189Kb)  |  收藏  |  浏览/下载：1198/273  |  提交时间：2010/10/29
Ingaasp  Strained Layer Quantum Well  Laser Diode  Mocvd  
Growth and fabrication of high performance 980nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Yang GW;  Xu ZT;  Xu JY;  Ma XY;  Zhang JM;  Chen LH;  Yang GW Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China.
Adobe PDF(356Kb)  |  收藏  |  浏览/下载：1401/382  |  提交时间：2010/10/29
Strained Quantum Well  Semiconductor Lasers  
1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Chen B;  Wang W;  Wang XJ;  Zhang JY;  Zhu HL;  Zhou F;  Chen B Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
Adobe PDF(162Kb)  |  收藏  |  浏览/下载：1249/248  |  提交时间：2010/10/29
1.3 Mu m  Complex-coupled Grating  Dfb Laser  
High brightness AlGaInP orange light emitting diodes 会议论文
DISPLAY DEVICES AND SYSTEMS II, 3560, BEIJING, PEOPLES R CHINA, SEP 16-17, 1998
作者:  Li YZ;  Wang GH;  Ma XY;  Peng HI;  Wang ST;  Chen LH;  Li YZ Chinese Acad Sci Inst Semicond Natl Engn Res Ctr Optoelect Devices POB 912 Beijing 100083 Peoples R China.
Adobe PDF(125Kb)  |  收藏  |  浏览/下载：1330/359  |  提交时间：2010/10/29
High Brightness  Led  Mocvd  Algainp  
Asymmetric dark current in double barrier quantum well infrared photodetectors 会议论文
INFRARED SPACEBORNE REMOTE SENSING VI, 3437, SAN DIEGO, CA, JUL 22-24, 1998
作者:  Zhuang QD;  Li JM;  Lin LY;  Zhuang QD Chinese Acad Sci Inst Semicond Ctr Semicond Mat POB 912 Beijing 100083 Peoples R China.
Adobe PDF(311Kb)  |  收藏  |  浏览/下载：1249/381  |  提交时间：2010/10/29
Dark Current  Quantum Well  Infrared  Photodetector  Mu-m  Performance  Detectors  Array  
Visible vertical cavity surface emitting laser 会议论文
SEMICONDUCTOR LASERS III, 3547, BEIJING, PEOPLES R CHINA, SEP 16-18, 1998
作者:  Cheng P;  Ma XY;  Gao JH;  Kang XJ;  Cao Q;  Wang HJ;  Luo LP;  Zhang CH;  Lu XL;  Lin SM;  Cheng P Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
Adobe PDF(469Kb)  |  收藏  |  浏览/下载：1386/385  |  提交时间：2010/10/29
Semiconductor Lasers  Oxidation  
无权访问的条目 期刊论文
作者:  Han XF;  Yang FM;  Li QS;  Zhang MC;  Zhou SZ;  Han XF,Chinese Acad Sci,Inst Phys,State Key Lab Magnetism,POB 603,Beijing 100080,Peoples R China.
Adobe PDF(235Kb)  |  收藏  |  浏览/下载：950/325  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Wang LS;  Liu XL;  Zan YD;  Wang D;  Lu DC;  Wang ZG;  Wang YT;  Cheng LS;  Zhang Z;  Wang LS,Chinese Acad Sci,Inst Semicond,Lab Semicond Mat Sci,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: lswang@red.semi.ac.cn
Adobe PDF(628Kb)  |  收藏  |  浏览/下载：911/207  |  提交时间：2010/08/12
无权访问的条目 期刊论文
作者:  Zhuang QD;  Li JM;  Zeng YP;  Pan L;  Kong MY;  Lin LY;  Zhuang QD,Chinese Acad Sci,Inst Semicond,Beijing 100083,Peoples R China.
Adobe PDF(124Kb)  |  收藏  |  浏览/下载：758/206  |  提交时间：2010/08/12