1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser
	Chen B; Wang W; Wang XJ; Zhang JY; Zhu HL; Zhou F; Chen B Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	Semiconductor Lasers III
会议录名称	SEMICONDUCTOR LASERS III, 3547
页码	12-15
会议日期	SEP 16-18, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3008-0
部门归属	chinese acad sci, inst semicond, natl res ctr optoelect technol, beijing 100083, peoples r china
摘要	1.3 mu m strained-layer multi-quantum wells complex-coupled distributed feedback lasers with a wide temperature range of 20 to 100 degrees C are reported. The low threshold current of 10mA and high single-facet slope efficiency of 0.3mW/mA were obtained for an as cleaved device. The single mode yield was as high as 80%.
关键词	1.3 Mu m Complex-coupled Grating Dfb Laser
学科领域	半导体物理
主办者	SPIE.; COS.; COEMA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13883
专题	中国科学院半导体研究所（2009年前）
通讯作者	Chen B Chinese Acad Sci Inst Semicond Natl Res Ctr Optoelect Technol POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Chen B,Wang W,Wang XJ,et al. 1.3 mu m InGaAsP/InP strained layer multi-quantum-well complex-coupled distributed feedback laser[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:12-15.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
3044.pdf（162KB）			限制开放	--	请求全文