Visible vertical cavity surface emitting laser

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	Visible vertical cavity surface emitting laser
	Cheng P; Ma XY; Gao JH; Kang XJ; Cao Q; Wang HJ; Luo LP; Zhang CH; Lu XL; Lin SM; Cheng P Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
	1998
会议名称	Semiconductor Lasers III
会议录名称	SEMICONDUCTOR LASERS III, 3547
页码	121-126
会议日期	SEP 16-18, 1998
会议地点	BEIJING, PEOPLES R CHINA
出版地	1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA
出版者	SPIE-INT SOC OPTICAL ENGINEERING
ISSN	0277-786X
ISBN	0-8194-3008-0
部门归属	acad sinica, inst semicond, state key lab integrated optoelect, beijing 100083, peoples r china
摘要	We have designed and fabricated the visible vertical-cavity surface-emitting lasers (VCSEL's) by using metalorganic vapor phase epitaxy (MOVPE). We use the 8 lambda optical cavities with 3 quantum wells in AlGaInP/AlGaAs red VCSEL's to reduce the drift leakage current and enhance the model gain in AlGaInP active region. The structure has a p-type stack with 36 DBR pairs on the top and an n-type with 55-1/2 pairs on the bottom. Using micro-area reflectance spectrum, we try to get a better concordance between the center wavelength of DBR and the emitting wavelength of the active region. We used a component graded layer of 0.05 lambda thick (x = 0.5 similar to 0.9) at the p-type DBR AlGaAs/AlAs interface to reduce the resistance of p-type DBR. We use selective oxidation to define the current injection path. Because the oxidation rate of a thick layer is faster than a thinner one, we grown a thick AlAs layer close to the active region. In this way, we got a smaller active region for efficient confinement of injected carriers (the aperture area is 3 x 3 mu m) to reduce the threshold and, at the same time, a bigger conductive area in the DBR layers to reduce the resistance. We employ Zn doping on the p-side of the junction to improve hole injection and control the Zn dopant diffusion to get proper p-i-n junction. At room temperature, pulse operation of the laser has been achieved with the low threshold current of 0.8mA; the wavelength is about 670nm.
关键词	Semiconductor Lasers Oxidation
学科领域	半导体物理
主办者	SPIE.; COS.; COEMA.
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/13887
专题	中国科学院半导体研究所（2009年前）
通讯作者	Cheng P Acad Sinica Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China.
推荐引用方式 GB/T 7714	Cheng P,Ma XY,Gao JH,et al. Visible vertical cavity surface emitting laser[C]. 1000 20TH ST, PO BOX 10, BELLINGHAM, WA 98227-0010 USA:SPIE-INT SOC OPTICAL ENGINEERING,1998:121-126.

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