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Dark current mechanism of unpassivated mid wavelength type II InAs/GaSb superlattice infrared photodetector 期刊论文
CHINESE SCIENCE BULLETIN, 2014, 卷号: 59, 期号: 28, 页码: 3696-3700
Authors:  Li, Q;  Ma, WQ;  Zhang, YH;  Cui, K;  Huang, JL;  Wei, Y;  Liu, K;  Cao, YL;  Wang, WY;  Liu, YL;  Jin, P
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A high speed 1000 fps CMOS image sensor with low noise global shutter pixels 期刊论文
SCIENCE CHINA-INFORMATION SCIENCES, 2014, 卷号: 57, 期号: 4, 页码: 042405
Authors:  Zhou, YF;  Cao, ZX;  Qin, Q;  Li, QL;  Shi, C;  Wu, NJ
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A 1000 fps Vision Chip Based on a Dynamically Reconfigurable Hybrid Architecture Comprising a PE Array Processor and Self-Organizing Map Neural Network 期刊论文
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2014, 卷号: 49, 期号: 9, 页码: 2067-2082
Authors:  Shi, C;  Yang, J;  Han, Y;  Cao, ZX;  Qin, Q;  Liu, LY;  Wu, NJ;  Wang, ZH
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基于STM32 和FPGA 的激光甲烷检测系统设计 期刊论文
传感器与微系统, 2012, 卷号: 31, 期号: 10, 页码: 116
Authors:  范松涛;  周燕;  潘教青;  曹忆南;  张强
Adobe PDF(371Kb)  |  Favorite  |  View/Download:1954/826  |  Submit date:2013/01/29
气体检测  激光  甲烷  Stm32  现场可编程门阵列  
单载流子光电探测器的高速及高饱和功率的研究 期刊论文
物理学报, 2012, 卷号: 61, 期号: 13, 页码: 138501-1-138501-6
Authors:  张岭梓,左玉华,曹权,薛春来,成步文,张万昌,曹学蕾,王启明
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硅材料中的杂质光伏效应 学位论文
, 北京: 中国科学院研究生院, 2012
Authors:  曹权
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Image Lag Optimization of Four-Transistor Pixel for High Speed CMOS Image 会议论文
Proceedings of SPIE 卷: 8194 文献号: 819435, Beijing, PEOPLES R CHINA, 2011
Authors:  Zhou YF (Zhou Yangfan);  Cao ZX (Cao Zhongxiang);  Li QL (Li Quanliang);  Qin Q (Qin Qi);  Wu NJ (Wu Nanjian)
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Wavelength-Tunable Si-Based InGaAs Resonant Cavity Enhanced Photodetectors Using Sol-Gel Wafer Bonding Technology 期刊论文
IEEE PHOTONICS TECHNOLOGY LETTERS, 2011, 卷号: 23, 期号: 13, 页码: 881-883
Authors:  Zhang LZ;  Cao Q;  Zuo YH;  Xue CL;  Cheng BW;  Wang QM;  Zhang, LZ, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. zhang.labs@gmail.com;  pobakey@semi.ac.cn;  yhzuo@semi.ac.cn;  clxue@semi.ac.cn;  cbw@semi.ac.cn;  qmwang@semi.ac.cn
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Resonant Cavity Enhanced (Rce) Photodetector  Silicon Photonics  Sol-gel Wafer Bonding  Thermal Tuning  Interfacial Energy  Silicon-wafers  High-speed  Temperature  Photodiodes  Morphology  Power  
Detailed balance limit efficiency of silicon intermediate band solar cells 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 9, 页码: 097103
Authors:  Cao Q (Cao Quan);  Ma ZH (Ma Zhi-Hua);  Xue CL (Xue Chun-Lai);  Zuo YH (Zuo Yu-Hua);  Wang QM (Wang Qi-Ming)
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Infrared response of the lateral PIN structure of a highly titanium-doped silicon-on-insulator material 期刊论文
CHINESE PHYSICS B, 2011, 卷号: 20, 期号: 10, 页码: 106104
Authors:  Ma, ZH;  Cao, Q;  Zuo, YH;  Zheng, J;  Xue, CL;  Cheng, BW;  Wang, QM;  Zuo, YH (reprint author), Chinese Acad Sci, Inst Semicond, State Key Lab Integrated Optoelect, Beijing 100083, Peoples R China,yhzuo@semi.ac.cn
Adobe PDF(617Kb)  |  Favorite  |  View/Download:671/132  |  Submit date:2012/02/06
Infrared Response  Ion implantatIon  Rapid Thermal Annealing  Intermediate Band Solar Cell  Photodiode