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In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD 会议论文
SILICON CARBIDE AND RELATED MATERIALS 2007, Otsu, JAPAN, OCT 14-19, 2007
作者:  Sun, GS;  Zhao, YM;  Wang, L;  Zhao, WS;  Liu, XF;  Ji, G;  Zeng, YP;  Sun, GS, Chinese Acad Sci, Inst Semicond, Novel Semicond Mat Lab, Beijing 100083, Peoples R China.
Adobe PDF(273Kb)  |  收藏  |  浏览/下载：1726/274  |  提交时间：2010/03/09
In-situ Doping  Boron  Aluminum  Memory Effects  Hot-wall Lpcvd  4h-sic  
Characterization of bulk ZnO single crystal grown by a CVT method - art. no. 68410F 会议论文
SOLID STATE LIGHTING AND SOLAR ENERGY TECHNOLOGIES, Beijing, PEOPLES R CHINA, NOV 12-14, 2007
作者:  Wei, XC;  Zhao, YW;  Dong, ZY;  Li, JM;  Wei, XC, Chinese Acad Sci, Inst Semicond, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(308Kb)  |  收藏  |  浏览/下载：1900/508  |  提交时间：2010/03/09
Zinc Oxide  X-ray Diffraction  Defects  Single Crystal  
Heavily doped polycrystalline 3C-SiC growth on SiO2/Si(100) substrates for resonator applications 会议论文
Silicon Carbide and Related Materials 2006丛书标题: MATERIALS SCIENCE FORUM, Newcastle upon Tyne, ENGLAND, SEP, 2006
作者:  Sun, G (Sun, Guosheng);  Ning, J (Ning, Jin);  Liu, X (Liu, Xingfang);  Zhao, Y (Zhao, Yongmei);  Li, J (Li, Jiaye);  Wang, L (Wang, Lei);  Zhao, W (Zhao, Wanshun);  Wang, L (Wang, Liang);  Sun, G, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(992Kb)  |  收藏  |  浏览/下载：1468/222  |  提交时间：2010/03/29
Polycrystalline 3c-sic  Resonator  Doping  Silicon-carbide  
Research on nitrogen implantation energy dependence of the properties of SIMON materials 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Pacific Grove, CA, SEP 05-10, 2004
作者:  Zhang EX;  Sun JY;  Chen J;  Chen M;  Zhang ZX;  Li N;  Zhang GQ;  Wang X;  Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. 电子邮箱地址: yqfzhexia@mail.sim.ac.cn
Adobe PDF(118Kb)  |  收藏  |  浏览/下载：1669/293  |  提交时间：2010/03/29
Nitrogen  
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure 会议论文
Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS, Rust, GERMANY, SEP 18-22, 2005
作者:  Ran, JX;  Wang, XL;  Hu, GX;  Li, JP;  Wang, JX;  Wang, CM;  Zeng, YP;  Li, JM;  Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(202Kb)  |  收藏  |  浏览/下载：1711/528  |  提交时间：2010/03/29
Aln  Impurities  Donor  
Electronic structures of wurtzite ZnO and ZnO/MgZnO quantum well 会议论文
JOURNAL OF CRYSTAL GROWTH, Singapore, SINGAPORE, JUL 03-08, 2005
作者:  Fan WJ;  Abiyasa AP;  Tan ST;  Yu SF;  Sun XW;  Xia JB;  Yeo YC;  Li MF;  Chong TC;  Fan, WJ, Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore. 电子邮箱地址: ewjfan@ntu.edu.sg
Adobe PDF(219Kb)  |  收藏  |  浏览/下载：3048/1041  |  提交时间：2010/03/29
Computer Simulation  
Leakage current analysis in AlGaInP/GaInP multi-quantum well lasers by the electrical derivative method - art. no. 60202F 会议论文
Optoelectronic Materials and Devices for Optical Communications丛书标题: PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS (SPIE), Shanghai, PEOPLES R CHINA, NOV 07-10, 2005
作者:  Xu Y;  Li YZ;  Song GF;  Gan QQ;  Cao Q;  Guo L;  Chen LH;  Xu, Y, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China.
Adobe PDF(258Kb)  |  收藏  |  浏览/下载：1554/381  |  提交时间：2010/03/29
Aigainp Laser Diodes  
Photoluminescence and Raman scattering correlated study of boron-doped silicon nanowires 会议论文
Science and Technology of Nanomaterials - ICMAT 2003丛书标题: JOURNAL OF METASTABLE AND NANOCRYSTALLINE MATERIALS SERIES, Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Zeng, XB;  Liao, XB;  Dai, ST;  Wang, B;  Xu, YY;  Xiang, XB;  Hu, ZH;  Diao, HW;  Kong, GL;  Zeng, XB, Chinese Acad Sci, Inst Semicond, State Key Lab Surface Phys, Beijing 100083, Peoples R China.
Adobe PDF(892Kb)  |  收藏  |  浏览/下载：1735/241  |  提交时间：2010/03/29
Chemical Vapor Deposition Processes  Nanomaterials  Semiconducting Silicon  Visible Photoluminescence  Porous Silicon  Amorphous-silicon  Si  Spectroscopy  Films  Nanostructures  Confinement  Growth  
Electronic structure and optical property of semiconductor nanocrystallites 会议论文
COMPUTATIONAL MATERIALS SCIENCE, 30 (3-4), Singapore, SINGAPORE, DEC 07-12, 2003
作者:  Xia JB;  Chang K;  Li SS;  Xia JB Chinese Acad Sci Inst Semicond Beijing 100083 Peoples R China. 电子邮箱地址: xiajb@red.semi.ac.cn
Adobe PDF(223Kb)  |  收藏  |  浏览/下载：1191/297  |  提交时间：2010/11/15
Semiconductor Cluster  Self-assembled Quantum Dot  Diluted Magnetic Semiconductor  Electronic Structure  Resonant Tunneling  Quantum Dots  Exciton-states  Spheres  
Electronic states of InAs verfically-assembled quantum disks in magnetic fields and two-electron quantum-disk qubit 会议论文
2004 7TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUITS TECHNOLOGY, Beijing, PEOPLES R CHINA, OCT 18-21, 2004
作者:  Dong, QR;  Niu, ZC;  Dong, QR, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China.
Adobe PDF(608Kb)  |  收藏  |  浏览/下载：1011/157  |  提交时间：2010/03/29
Dots