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基于Sn元素的二维硫族化合物半导体及其光电器件 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2020
Authors:  崔宇
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4H-SiC功率MOSFET研制 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2020
Authors:  倪炜江
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水平三层流 HVPE反应室流场和热场数值模拟计算研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  胡君
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4H-SiC基AlN栅介质原子层沉积生长研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  陈俊
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高压大功率碳化硅IGBT器件研究 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  温正欣
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4H-SiC UMOSFET关键工艺研发 学位论文
, 中国科学院半导体研究所: 中国科学院大学, 2019
Authors:  刘敏
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Unique and Tunable Photodetecting Performance for Two- Dimensional Layered MoSe 2 /WSe 2 p−n Junction on the 4H-SiC Substrate 期刊论文
Wei Gao; Feng Zhang; Zhaoqiang Zheng; Jingbo Li, 2019, 卷号: 11, 期号: 21, 页码: 19277-19285
Authors:  Wan G(万刚)
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The composition and interfacial properties of annealed AlN films deposited on 4H-SiC by atomic layer deposition 期刊论文
Materials Science in Semiconductor Processing, 2019, 卷号: 94, 页码: 107-115
Authors:  Jun Chen ;   Bowen Lv ;   Feng Zhang ;   Yinshu Wang ;   Xingfang Liu ;   Guoguo Yan ;   Zhanwei Shen ;   Zhengxin Wen ;   Lei Wang ;   Wanshun Zhao ;   Guosheng Sun ;   Chao Liu ;   Yiping Zeng
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Design and fabrication of 10-kV silicon–carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension 期刊论文
Chinese Physics B, 2019, 卷号: 28, 期号: 6, 页码: 068504
Authors:  Zheng-Xin Wen;   Feng Zhang;   Zhan-Wei Shen;   Jun Chen;   Ya-Wei He;   Guo-Guo Yan;   Xing-Fang Liu;   Wan-Shun Zhao;   Lei Wang;   Guo-Sheng Sun;   Yi-Ping Zeng
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The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates 期刊论文
Journal of Crystal Growth, 2019, 卷号: 507, 页码: 175-179
Authors:  G.G. Yan ;   X.F. Liu ;   Z.W. Shen ;   W.S. Zhao ;   L. Wang ;   Y.X. Cui ;   J.T. Li ;   F. Zhang ;   G.S. Sun ;   Y.P. Zeng
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