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无权访问的条目 期刊论文
Authors:  杨冠卿;  张世著;  徐波;  陈涌海;  王占国
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Origin of attendant phenomena of bipolar resistive switching and negative differential resistance in SrTiO3:Nb/ZnO heterojunctions 期刊论文
APPLIED PHYSICS LETTERS, 2014, 卷号: 104, 期号: 4, 页码: 043501
Authors:  Jia, CH;  Sun, XW;  Li, GQ;  Chen, YH;  Zhang, WF
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Electrical-thermal-luminous-chromatic model of phosphor-converted white light-emitting diodes 期刊论文
APPLIED THERMAL ENGINEERING, 2014, 卷号: 63, 期号: 2, 页码: 588-597
Authors:  Ye, HY;  Koh, SW;  Yuan, C;  van Zeijl, H;  Gielen, AWJ;  Lee, SWR;  Zhang, GQ
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Thermal and mechanical effects of voids within flip chip soldering in LED packages 期刊论文
MICROELECTRONICS RELIABILITY, 2014, 卷号: 54, 期号: 9-10, 页码: 2028-2033
Authors:  Liu, Y;  Leung, SYY;  Zhao, J;  Wong, CKY;  Yuan, CA;  Zhang, GQ;  Sun, FL;  Luo, LL
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Modulation of Fermi velocities of Dirac electrons in single layer graphene by moire superlattice 期刊论文
APPLIED PHYSICS LETTERS, 2013, 卷号: 103, 期号: 11, 页码: 113106 - 113106-5
Authors:  Zou, Q;  Belle, BD;  Zhang, LZ;  Xiao, WD;  Yang, K;  Liu, LW;  Wang, GQ;  Fei, XM;  Huang, Y;  Ma, RS;  Lu, Y;  Tan, PH;  Guo, HM;  Du, SX;  Gao, HJ
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Germanium-Tin n(+)/p Junction Formed Using Phosphorus Ion Implant and 400 degrees C Rapid Thermal Anneal 期刊论文
IEEE ELECTRON DEVICE LETTERS, 2012, 卷号: 33, 期号: 11, 页码: 1529-1531
Authors:  Wang LX (Wang, Lanxiang);  Su SJ (Su, Shaojian);  Wang W (Wang, Wei);  Yang Y (Yang, Yue);  Tong Y (Tong, Yi);  Liu B (Liu, Bin);  Guo PF (Guo, Pengfei);  Gong X (Gong, Xiao);  Zhang GZ (Zhang, Guangze);  Xue CL (Xue, Chunlai);  Cheng BW (Cheng, Buwen);  Han GQ (Han, Genquan);  Yeo YC (Yeo, Yee-Chia)
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Anisotropic strain relaxation of thin Fe film on c(4 x 4) reconstructed GaAs (001) surface 期刊论文
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2009, 卷号: 42, 期号: 2, 页码: 150-153
Authors:  Lu J;  Xu PF;  Zhu YG;  Meng HJ;  Chen L;  Wang WZ;  Zhang XH;  Zhao JH;  Pan GQ;  Zhao, JH, Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, POB 912, Beijing 100083, Peoples R China. E-mail Address: jhzhao@red.semi.ac.cn
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Fe Thin Film  Anisotropic Strain Relaxation  Magnetic Anisotropy  X-ray Diffraction  Uniaxial Magnetic-anisotropy  Epitaxial-growth  Gaas(001)  Devices  
Research on nitrogen implantation energy dependence of the properties of SIMON materials 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 卷号: 242, 期号: 1-2, 页码: 585-587
Authors:  Zhang EX;  Sun JY;  Chen J;  Chen M;  Zhang ZX;  Li N;  Zhang GQ;  Wang X;  Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. E-mail: yqfzhexia@mail.sim.ac.cn
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Nitrogen  Ion implantatIon  Simox  Implantation Energy  C-v Measurement  Charge  Oxygen  Oxides  Layers  
Research on nitrogen implantation energy dependence of the properties of SIMON materials 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Pacific Grove, CA, SEP 05-10, 2004
Authors:  Zhang EX;  Sun JY;  Chen J;  Chen M;  Zhang ZX;  Li N;  Zhang GQ;  Wang X;  Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. 电子邮箱地址: yqfzhexia@mail.sim.ac.cn
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Nitrogen  
Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 1, 页码: 348-353
Authors:  Zheng ZS;  Liu ZL;  Zhang GQ;  Li N;  Fan K;  Zhang EX;  Yi WB;  Chen M;  Wang X;  Zheng, ZS, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China.
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Soi