The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure

SEMI OpenIR > 中国科学院半导体研究所（2009年前）

	The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
	Ran, JX; Wang, XL; Hu, GX; Li, JP; Wang, JX; Wang, CM; Zeng, YP; Li, JM; Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
	2006
会议名称	32nd International Symposium on Compound Semiconductors
会议录名称	Physica Status Solidi C - Current Topics in Solid State Physics丛书标题: PHYSICA STATUS SOLIDI C-CURRENT TOPICS IN SOLID STATE PHYSICS
页码	Vol 3 no 3 3 (3): 490-493
会议日期	SEP 18-22, 2005
会议地点	Rust, GERMANY
出版地	605 THIRD AVE, NEW YORK, NY 10158-0012 USA
出版者	WILEY-VCH, INC
ISSN	1610-1634
部门归属	chinese acad sci, inst semicond, ctr mat sci, beijing 100083, peoples r china
摘要	An AlGaN/GaN HBT structure was grown by low-pressure metalorganic chemical vapor deposition (MOCVD) on sapphire substrate. From the high-resolution x-ray diffraction and transmission electron microscopy (TEM) measurements, it was indicated that the structure is of good quality and the AlGaN/GaN interfaces are abrupt and smooth. In order to obtain the values of Si doping and electronic concentrations in the AlGaN emitter and GaN emitter cap layers, Secondary Ion Mass Spectroscopy (SIMS) and electrochemical CV measurements were carried out. The results showed that though the flow rate of silane (SiH4) in growing the AlGaN emitter was about a quarter of that in growing GaN emitter cap and subcollector layer, the Si sputtering yield in GaN cap layer was much smaller than that in the AlGaN emitter layer. The electronic concentration in GaN was about half of that in the AlGaN emitter layer. It is proposed that the Si, Al co-doping in growing the AlGaN emitter layer greatly enhances the Si dopant efficiency in the AlGaN alloy. (c) 2006 WILEY-VCH Verlag GmbH & Co KGaA, Weinheim.
关键词	Aln Impurities Donor
学科领域	半导体材料
收录类别	CPCI-S
语种	英语
文献类型	会议论文
条目标识符	http://ir.semi.ac.cn/handle/172111/9932
专题	中国科学院半导体研究所（2009年前）
通讯作者	Ran, JX, Chinese Acad Sci, Inst Semicond, Ctr Mat Sci, POB 912, Beijing 100083, Peoples R China.
推荐引用方式 GB/T 7714	Ran, JX,Wang, XL,Hu, GX,et al. The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure[C]. 605 THIRD AVE, NEW YORK, NY 10158-0012 USA:WILEY-VCH, INC,2006:Vol 3 no 3 3 (3): 490-493.

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