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高剂量注氮对注氧隔离硅材料埋氧层中正电荷密度的影响 期刊论文
物理学报, 2011, 卷号: 60, 期号: 5, 页码: 056104-1-056104-6
Authors:  唐海马;  郑中山;  张恩霞;  于芳;  李宁;  王宁娟;  李国花;  马红芝
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Influence of high-dose nitrogen implantation on the positive charge density of the buried oxide of silicon-on-insulator wafers 期刊论文
ACTA PHYSICA SINICA, 2011, 卷号: 60, 期号: 5, 页码: Article no.56104
Authors:  Tang HM;  Zheng ZS;  Zhang EX;  Yu F;  Li N;  Wang NJ;  Li GH;  Ma HZ;  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. zszheng513@163.com
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Separation By Oxygen Implantation  Buried Oxide  Nitrogen Implantation  Positive Charge Density  Radiation Hardness  Implanting Nitrogen  Ion-implantation  Improvement  Technology  Oxygen  Layer  
Influence of nitrogen implantation into the buried oxide on the radiation hardness of silicon-on-insulator wafers 期刊论文
CHINESE PHYSICS B, 2010, 卷号: 19, 期号: 10, 页码: Art. No. 106106
Authors:  Tang HM (Tang Hai-Ma);  Zheng ZS (Zheng Zhong-Shan);  Zhang EX (Zhang En-Xia);  Yu F (Yu Fang);  Li N (Li Ning);  Wang NJ (Wang Ning-Juan);  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China. 电子邮箱地址: zszheng513@163.com
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Silicon-on-insulator Wafers  Radiation Hardness  Nitrogen Implantation  
Effect of implantation of nitrogen into SIMOX buried oxide on its fixed positive charge density 期刊论文
ACTA PHYSICA SINICA, 2007, 卷号: 56, 期号: 9, 页码: 5446-5451
Authors:  Zheng, ZS (Zheng Zhong-Shan);  Zhang, EX (Zhang En-Xia);  Liu, ZL (Liu Zhong-Li);  Zhang, ZX (Zhang Zheng-Xuan);  Li, N (Li Ning);  Li, GH (Li Guo-Hua);  Zheng, ZS, Univ Jinan, Dept Phys, Jinan 250022, Peoples R China.
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Simox  
SIMOX SOI埋氧注氮工艺对埋氧中固定正电荷密度的影响 期刊论文
物理学报, 2007, 卷号: 56, 期号: 9, 页码: 5446-5451
Authors:  郑中山;  张恩霞;  刘忠立;  张正选;  李宁;  李国花
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Research on nitrogen implantation energy dependence of the properties of SIMON materials 期刊论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 卷号: 242, 期号: 1-2, 页码: 585-587
Authors:  Zhang EX;  Sun JY;  Chen J;  Chen M;  Zhang ZX;  Li N;  Zhang GQ;  Wang X;  Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. E-mail: yqfzhexia@mail.sim.ac.cn
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Nitrogen  Ion implantatIon  Simox  Implantation Energy  C-v Measurement  Charge  Oxygen  Oxides  Layers  
Research on nitrogen implantation energy dependence of the properties of SIMON materials 会议论文
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, Pacific Grove, CA, SEP 05-10, 2004
Authors:  Zhang EX;  Sun JY;  Chen J;  Chen M;  Zhang ZX;  Li N;  Zhang GQ;  Wang X;  Zhang, EX, Chinese Acad Sci, Ion Beam Lab, Shanghai Inst Microsyst & Informat Technol, Shanghai 20050, Peoples R China. 电子邮箱地址: yqfzhexia@mail.sim.ac.cn
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Nitrogen  
Effects of the technology of implanting nitrogen into buried oxide layer on the characteristics of partially depleted SOI nMOSFET 期刊论文
ACTA PHYSICA SINICA, 2005, 卷号: 54, 期号: 1, 页码: 348-353
Authors:  Zheng ZS;  Liu ZL;  Zhang GQ;  Li N;  Fan K;  Zhang EX;  Yi WB;  Chen M;  Wang X;  Zheng, ZS, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China.
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Soi  
Improvement of the radiation hardness of SIMOX buried layers using nitrogen implantation 期刊论文
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2005, 卷号: 20, 期号: 6, 页码: 481-484
Authors:  Zheng ZS;  Liu ZL;  Zhang GQ;  Li N;  Li GH;  Ma HZ;  Zhang EX;  Zhang ZX;  Wang X;  Zheng, ZS, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: zszheng@red.semi.ac.cn
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Oxides  
Effects of techniques of implanting nitrogen into buried oxide on the characteristics of partially depleted SOIPMOSFET 期刊论文
CHINESE PHYSICS LETTERS, 2005, 卷号: 22, 期号: 3, 页码: 654-656
Authors:  Zheng ZS;  Liu ZL;  Zhang GQ;  Li N;  Fan K;  Zhang EX;  Yi WB;  Chen M;  Wang X;  Zheng, ZS, Chinese Acad Sci, Inst Semicond, Microelect R&D Ctr, Beijing 100083, Peoples R China. 电子邮箱地址: zszheng@red.semi.ac.cn
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Scattering